K2957.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 K2957 데이타시트 다운로드

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2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 7 mtyp.
4 V gate drive devices.
High speed switching
Outline
REJ03G1057-0600
(Previous: ADE-208-567D)
Rev.6.00
Sep 07, 2005
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
4
G
1
2
3
123
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.4.00 Sep 07, 2005 page 1 of 7

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2SK2957(L), 2SK2957(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Tch
Tstg
Ratings
30
±20
50
200
50
75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
30
±20
1.0
25
Typ
7.0
12
45
2000
1500
350
20
330
190
190
0.95
60
Max
10
±10
2.0
10
18
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 30 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 V Note3
ID = 25 A, VGS = 4 V Note3
ID = 25 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1 MHz
VGS = 10 V, ID = 25 A,
RL = 0.4
IF = 50A, VGS = 0
IF = 50A, VGS = 0
diF/ dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 7

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2SK2957(L), 2SK2957(S)
Main Characteristics
Power vs. Temperature Derating
100
75
50
25
0 50 100 150 200
Case Temperature TC (°C)
Typical Output Characteristics
10 V 5 V
50
4 V Pulse Test
40 3.5 V
3V
30
20
2.5 V
10
VGS = 2 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
ID = 20 A
0.1 10 A
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
1000
300 10 µs
100
30
10
3
1
OtlihmpisietearadretiboaynisRinDDSPC(Wo(OTn=c)p1e=0ra2mt5si1o°1(Cnm10)0sshµost)
0.3
0.1 Ta = 25°C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
40 Pulse Test
30
25°C
20
75°C
Tc = –25°C
10
0 1 23 45
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
500
Pulse Test
500
100
50
20
10
5
12
VGS = 4 V
10 V
5 10 20 50 100 200
Drain Current ID (A)

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2SK2957(L), 2SK2957(S)
Static Drain to Source on State
Resistance vs. Temperature
20
Pulse Test
16
ID = 5, 10, 20 A
VGS = 4 V
12
8
10 V
4
5 ,10, 20 A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
100
50
20
10
5
2
1
0.1 0.3
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 50 A
40
30 VDS
VGS
20
20
16
VDD = 5 V
10 V
25 V
12
8
10 VDD = 25 V
10 V
4
5V 0
0 20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
Tc = –25°C
10 25°C
5
75°C
2
1
0.5
0.1 0.2 0.5 1 2
VDS = 10 V
Pulse Test
5 10 20 50
Drain Current ID (A)
10000
Typical Capacitance
vs. Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
300
10
0
VGS = 0
f = 1 MHz
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
500
200
100
50
VGS = 10 V, VDD = 10 V
PW = 5 µs, duty < 1 %
td(off)
tf
tr
td(on)
20
10
0.1 0.2 0.5 1 2
5 10 20 50
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 7

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2SK2957(L), 2SK2957(S)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
10 V
30 5 V
VGS = 0, –5 V
20
10
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) θ ch – c
θch – c = 1.67°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
RL
Vin
10 V
50
VDD
= 10 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.4.00 Sep 07, 2005 page 5 of 7