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MOSFETs Silicon N-channel MOS (U-MOS)
TK100F04K3L
1. Applications
• Switching Voltage Regulators
• DC-DC Converters
• Motor Drivers
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 2.5 m(typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK100F04K3L
1: Gate
2: Drain (Heatsink)
3: Source
TO-220SM(W)
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
100 A
Drain current (pulsed)
(Note 1)
IDP
300
Power dissipation
(Tc = 25)
PD 180 W
Single-pulse avalanche energy
(Note 2)
EAS
125 mJ
Avalanche current
IAR 100 A
Channel temperature
(Note 3)
Tch
175
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
TK100F04K3L
Characteristics
Symbol Max Unit
Channel-to-case thermal resistance
Rth(ch-c)
0.83 /W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: VDD = 25 V, Tch = 25(initial), L = 13 µH, RG = 25 , IAR = 100 A
Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
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TK100F04K3L
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain cut-off current
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 40 V, VGS = 0 V
  ±10 µA
  10
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
40   V
Drain-source breakdown voltage
Gate threshold voltage
(Note 4)
V(BR)DSX ID = 10 mA, VGS = -20 V
Vth VDS = 10 V, ID = 1 mA
20  
2.0 3.0
Drain-source on-resistance
RDS(ON) VGS = 6 V, ID = 50 A
3.0 4.5 m
VGS = 10 V, ID = 50 A
2.5 3.0
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
tr
ton
tf
toff
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
See Fig. 6.2.1
Min Typ. Max Unit
4980
680
1100
21
23
31
95
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Qg
Test Condition
VDD 32 V, VGS = 10 V, ID = 100 A
Qgs
Qgd
Min Typ. Max Unit
105 nC
60
45
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
(Note 5)
(Note 5)
IDR
IDRP
VDSF
IDR = 100 A, VGS = 0 V
Reverse recovery time
Reverse recovery charge
trr IDR = 100 A, VGS = 0 V
Qrr -dIDR/dt = 50 A/µs
Note 5: Ensure that the channel temperature does not exceed 175.
Min Typ. Max Unit
  100 A
  300
  -1.2 V
61 ns
49 nC
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7. Marking (Note)
TK100F04K3L
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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TK100F04K3L
8. Moisture-Proof Packing
This device is packed in a moisture-proof laminated aluminum bag.
8.1. Precautions for Transportation and Storage (Note)
(1) Avoid excessive vibration during transportation.
(2) Do not toss or drop the packed devices to avoid ripping of the bag.
(3) After opening the moisture-proof bag, the devices should be assembled within two weeks in an
environment of 5to 30and RH70% or below. Perform reflow at most twice.
(4) The moisture-proof bag may be stored unopened for up to 24 months at 5to 30and RH90% or below.
(5) If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the
30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as
follows:
Baking conditions: 125for 48 hours.
Note: Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum
magazines when baking.
The humidity indicator shows an approximate ambient humidity at 25.
If the ambient humidity is below 30%, the color of all the indicator dots is blue.
If, upon opening the bag, the color of the 30% dot has changed from blue to pink, the
devices should be baked before assembly.
Fig. 8.1.1 Humidity Indicator
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