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Applications
High Power Switching
TGS2355
0.5-6 GHz High Power GaN Switch
Product Features
Frequency Range: 0.5 - 6 GHz
Insertion Loss: < 1.3 dB
Power Handling: 100 W
Isolation: 40 dB typical
Control Voltages: 0 V/-40 V from either side of
the MMIC
Reflective Switch
Chip Dimensions: 2.14 x 2.50 x 0.1 mm
Functional Block Diagram
General Description
The TGS2355 is a single-pole, double-throw (SPDT)
reflective switch fabricated on TriQuint’s 0.25um GaN
on SiC production process. Operating from 0.5 to 6
GHz, the TGS2355 provides up to 100 W input power
handling with < 1 dB insertion over most of the
operating band and greater than 40 dB isolation.
The TGS2355 is available in a small 2.14 x 2.50 mm
die size and requires very little control current allowing
for easy system integration without impacting system
power budgets.
The TGS2355 is ideally suited for high power switching
applications across both defense and commercial
applications.
Lead-free and RoHS compliant.
Evaluation boards available on request.
Pin Configuration
Pin No.
1
2, 7
3, 6
4
5
Label
RFC
VC1
VC2
RF1
RF2
Ordering Information
Part No.
TGS2355
ECCN
EAR99
Description
0.5-6 GHz High Power
GaN Switch
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com

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Absolute Maximum Ratings
Parameter
Control Voltage (VC)
Control Current (IC)
Power Dissipation
RF Input Power (pulsed, 10% Duty
Cycle, 20us pulse width)
Channel Temperature, TCH
Mounting Temperature (30 sec)
Rating
-50 V
-3.5 / +3.5 mA
36.8 W
51 dBm
275 °C
320 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
TGS2355
0.5-6 GHz High Power GaN Switch
Recommended Operating Conditions
Parameter
Min Typ Max Units
Frequency
0.5 6 GHz
Input Power Handling
(pulsed)
50
dBm
Control Voltage
-40 V
Channel Temp., Tch 225 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: Temp= +25°C. Z0 = 50 Ω, Vc=-40 V
Parameter
Min
Operational Frequency Range
0.5
P-0.1dB (pulsed)
Control Current (IC)
Insertion Loss (On-State)
Input Return Loss – On-State (Common Port RL)
Output Return Loss – On-State (Switched Port RL)
Isolation (Off-State)
Output Return Loss – Off-State (Isolated Port RL)
Control Voltage
Insertion Loss Temperature Coefficient
Typ
50
1.0
1.0
15
15
40
2.5
-40
0.003
Max
6
-48
Units
GHz
dBm
mA
dB
dB
dB
dB
dB
V
dB/ °C
Datasheet: Rev - 06-20-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com

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TGS2355
0.5-6 GHz High Power GaN Switch
Specifications
Thermal and Reliability Information
Parameter
Conditions
Value
Units
Thermal Resistance (θJC) (1)
Channel Temperature (TCH)
Median Lifetime (TM)
TBASE = 85 °C, VC1 = 0 V, VC2 = -40 V,
PIN = 100 W (CW), PDISS =29.3 W
4.78
225
1.56E06
ºC/W
°C
Hrs
Notes:
1.MMIC soldered to 20 mil thick Cu-Mo carrier plate using 1.5 mil thick AuSn solder. Thermal resistance is determined from
the channel to the back of the carrier plate (fixed 85 °C temperature).
Median Lifetime
Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
245
225
205
185
165
145
125
105
85
0
Peak Temperature vs. CW Power
1.5-mil AuSn Die Attach; Pkg base = 85 °C
Tch,max for 20-mil CuMo Pkg Base
Recommended Limit for Tch, max
15 30 45 60 75 90
RF Input Power, Watts
105
Maximum Channel Temperature
20 mil CuMo, Tbase = 85 °C, Pin = 100W
245
225
205
185
165
145
125
105
85
1.0E-06
1.0E-05
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
Pulse Width (sec)
Datasheet: Rev - 06-20-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com

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TGS2355
0.5-6 GHz High Power GaN Switch
Typical Performance (Tuned EVB)
Test conditions unless otherwise noted: VC1 = 0 V, VC2 = -40 V, CW Input, Temp= +25 °C
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
Insertion Loss vs. Frequency
Temp.= 25 °C
RF1 Path (S21) On
RF2 Path (S31) On
1234567
Frequency (GHz)
8
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
Insertion Loss vs. Freq. vs. VC2
VC1 = 0V, RF1 Path On
VC2 = -35 V
VC2 = -40 V
VC2 = -45V
1234567
Frequency (GHz)
8
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
Insertion Loss vs. Freq. vs. Temp.
VC1 = 0V, VC2 = -40 V, RF1 Path ON
- 40 °C
+25 °C
+85 °C
1234567
Frequency (GHz)
8
Isolation vs. Frequency
0
Temp.= 25 °C
-10
-20
-30
-40
-50
-60
RF2 Path (S31) Off
-70 RF1 Path (S21) Off
-80
012345678
Frequency (GHz)
Return Loss vs. Frequency
0
Temp. = 25 °C
-5
RFC (S11)
-10 RF1 Path (S22) On
RF2 Path (S33) On
-15
-20
-25
-30
01234567
Frequency (GHz)
8
Return Loss vs. Frequency
0.0
Temp. = 25 °C
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
0
RF2 Path (S33) Off
RF1 Path (S33) Off
12345
Frequency (GHz)
6
7
8
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 4 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com

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TGS2355
0.5-6 GHz High Power GaN Switch
Typical Performance (Tuned EVB)
Test conditions unless otherwise noted: VC1 = 0 V, VC2 = -40 V, Pulsed RF Input PW=20 usec, Duty Cycle=10%, Temp= +25 °C
Compression vs. Pin vs. Freq.
0.10
VC1 = 0 V, VC2 = -40 V, Temp. = 25 °C
0.05
0.00
-0.05
-0.10
-0.15
-0.20
0.1 GHz
0.2 GHz
-0.25
0.3 GHz
0.5 GHz
0.4 GHz
1.0 GHz
-0.30
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
Compression vs. Pin vs. Freq.
0.10
VC1 = 0 V, VC2 = -40 V, Temp. = 25 °C
0.05
0.00
-0.05
-0.10
-0.15
2.0 GHz
-0.20
3.0 GHz
4.0 GHz
-0.25
5.0 GHz
-0.30
6.0 GHz
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
Compression vs. Pin vs. Temp.
0.10
VC1 = 0 V, VC2 = -40 V, Freq. = 3.0 GHz
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
- 40 °C
+25 °C
+85 °C
-0.30
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
0.10 Compression vs. Pin vs. VC
VC1 = 0 V, Freq. = 3.0 GHz, Temp. = 25 °C
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
VC2 = -35 V
VC2 = -40 V
VC2 = -45 V
-0.30
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com