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SSM6J213FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS)
SSM6J213FE
Power Management Switch Applications
1.5-V drive
Low ON-resistance: RDS(ON) = 250 m(max) (@VGS = -1.5 V)
RDS(ON) = 178 m(max) (@VGS = -1.8 V)
RDS(ON) = 133 m(max) (@VGS = -2.5 V)
RDS(ON) = 103 m(max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID (Note 1)
IDP (Note 1)
PD (Note 2)
t = 10s
Tch
Tstg
Rating
-20
±8
-2.6
-5.2
500
700
150
55 to 150
Unit
V
V
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
ES6
1,2,5,6 Drain
3 Gate
4 Source
JEDEC
JEITA
TOSHIBA
2-2N1J
Weight : 3mg ( typ. )
Marking (Top View)
654
PS
123
Equivalent Circuit
654
123
1 2010-11-29

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SSM6J213FE
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-source breakdown voltage
V (BR) DSS ID = -1 mA, VGS = 0 V
V (BR) DSX ID = -1 mA, VGS = 5 V
-20 ⎯ ⎯ V
(Note 4) -15
V
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0 V
⎯ ⎯ -1 μA
Gate leakage current
IGSS VGS = ±8 V, VDS = 0 V
⎯ ⎯ ±1 μA
Gate threshold voltage
Vth VDS = -3 V, ID = -1 mA
-0.3 -1.0 V
Forward transfer admittance
YfsVDS = -3 V, ID = -1.0 A
(Note 3) 2.8 5.6
S
ID = -1.5 A, VGS = -4.5 V
(Note 3) 88.5 103
Drain–source ON-resistance
RDS (ON)
ID = -1.0 A, VGS = -2.5 V
ID = -0.5 A, VGS = -1.8 V
(Note 3)
(Note 3)
107.5
130
133
178
mΩ
ID = -0.25 A, VGS = -1.5 V
(Note 3)
151 250
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS = -10 V, VGS = 0 V
f = 1 MHz
290
44
32
pF
Switching time
Turn-on time
Turn-off time
ton VDD = -10 V, ID = -0.5 A
toff VGS = 0 to -2.5 V, RG = 4.7 Ω
12.0
46.2
ns
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs1
Qgd
VDD = -10 V, ID = -2.0 A,
VGS = -4.5 V
4.7
0.4 nC
1.0
Drain-source forward voltage
VDSF ID = 2.6 A, VGS = 0 V
(Note 3) 0.89 1.2
V
Note3: Pulse test
Note4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
0 IN
OUT
2.5V
10 μs
VDD = -10 V
RG = 4.7 Ω
Duty 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
RL
VDD
(b) VIN
0V
2.5 V
(c) VOUT VDS (ON)
VDD
90%
10%
90%
10%
tr
tf
ton toff
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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ID – VDS
-6
-4.5 V
-2.5 V
-1.8 V
-5
-4
-3 VGS = -1.5 V
-2
-1 Common Source
Ta = 25 °C
Pulse test
0
0 -0.2 -0.4 -0.6 -0.8
-1
Drain–source voltage VDS (V)
SSM6J213FE
ID – VGS
-10
-1
-0.1
-0.01
-0.001
-0.0001
0
Ta = 100 °C
25 °C
-25 °C
-1.0
Common Source
VDS = -3 V
Pulse test
-2.0
Gate–source voltage VGS (V)
RDS (ON) – VGS
300
ID = -1.5 A
Common Source
Pulse test
200
25 °C
Ta = 100 °C
100
-25 °C
0
0 -2 -4 -6
Gate–source voltage VGS (V)
-8
RDS (ON) – ID
300 Common Source
Ta = 25 °C
Pulse test
-1.5 V
200
-1.8 V
-2.5 V
100
VGS = -4.5 V
0
0 -1 -2 -3 -4 -5 -6
Drain current ID (A)
RDS (ON) – Ta
300
Common Source
Pulse test
-1.0 A / -2.5 V
200
-0.5 A / -1.8 V
-0.25 A / -1.5 V
100
ID = -1.5 A / VGS = -4.5 V
0
50 0 50 100 150
Ambient temperature Ta (°C)
Vth – Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
-0.5
0
50 0 50 100 150
Ambient temperature Ta (°C)
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