SSM6K32TU.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 SSM6K32TU 데이타시트 다운로드

No Preview Available !

SSM6K32TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K32TU
Relay drive, DC/DC converter application
Unit: mm
z 4Vdrive
z Low on resistance:
Ron = 440m(max) (@VGS = 4 V)
Ron = 300m(max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
VDS
VGSS
ID
IDP
PD (Note 1)
Tch
Tstg
60
±20
2
6
500
150
55~150
V
V
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1:
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6
t,
Cu
Pad:
645
mm2
)
Electrical Characteristics (Ta = 25℃)
Characteristics
Gate leakage current
Drain cut-off current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gatesource charge
Gatedrain charge
Drain-Source forward voltage
Symbol
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
Qg
Qgs
Qgd
VDSF
Test Condition
VGS = ±16V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 10mA, VGS = 0V
VDS = 10V, lD = 1mA
VGS = 4V, ID = 1A
VGS = 10V, ID = 1A
VDS = 10V, ID = 1A
VDS = 10V, VGS = 0V
f = 1MHz
VDD 30 V, ID = 1 A
VGS = 0~10 V, RG = 50 Ω
VDD48V, VGS = 10V
ID = 2A
ID = -2A, VGS = 0V
1
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC
JEITA
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Min Typ. Max Unit
― ― ±10 μA
― ― 100 μA
60 ― ― V
0.8 2.0 V
0.33 0.44
Ω
0.23 0.30
1.0 2.0 S
140
20 pF
65
140
210
ns
470
1600
5.0
3.6 nC
1.4
― ― −1.5 V
2007-11-01

No Preview Available !

Switching Time Test Circuit
SSM6K32TU
(a) Test Circuit
10V
IN
0
10 μs
(b) ) VIN
OUT
VDD 30 V
RG = 50 Ω
Duty <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
(c) VOUT
VDD
10 V
0V
VDD
VDS (ON)
10%
90%
90%
10%
tr
tf
ton toff
Marking
65
4
Equivalent Circuit (Top View)
654
KNB
123
123
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2 2007-11-01

No Preview Available !

SSM6K32TU
3 2007-11-01