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Advanced Power
Electronics Corp.
AP6800GEO
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Optimal DC/DC battery application
RoHS compliant
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
BVDSS
RDS(ON)
ID
20V
20mΩ
6
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
PD@TA=25
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Thermal Resistance Junction-ambient3
Rating
20
±10
6.0
4.7
30
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
125
Unit
/W
Data and specifications subject to change without notice
200109061-1/4

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AP6800GEO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
Gate Threshold Voltage
VGS=4V, ID=4A
VGS=2.5V, ID=2A
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±10V
ID=6A
VDS=15V
VGS=4.5V
VDS=10V
ID=1A
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RG=3.3Ω,VGS=5V
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
20 -
-V
- 0.02 - V/
- - 20 mΩ
- - 21 mΩ
- - 25 mΩ
0.5 - 1.2 V
-6-S
- - 1 uA
- - 25 uA
- - ±30 uA
- 23.4 37 nC
- 2.5 - nC
- 11.1 - nC
- 8.2 - ns
- 18.4 - ns
- 19.6 -
ns
- 58 - ns
- 580 930 pF
- 315 - pF
- 165 - pF
- 23
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=0.84A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 40 - ns
- 39 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad.
2/4

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40
T A =25 o C
4.5V
3.5V
3.0V
30
2.5V
20 V G =2.0V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I D = 4A
T A =25 o C
40
10
0 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
T j =150 o C
T j =25 o C
3
2
1
0
0 0.2 0.4 0.6 0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
AP6800GEO
40
T A =150 o C
4.5V
3.5V
3.0V
30 2.5V
20 V G =2.0V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I D = 6A
V G = 4.5V
1.5
1.1
0.7
0.3
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
1.6
1.2
0.8
0.4
200109061-1/4
0
-50 0
50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4

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AP6800GEO
12
ID=6A
10
8
6
V DS =10V
V DS =12V
V DS =15V
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 100us
1ms
1 10ms
100ms
0.1 T A =25 o C
Single Pulse
1s
DC
0.01
0.1
1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
70
60 V DS = 5V
50
T j =25 o C T j =150 o C
40
30
20
10
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
f=1.0MHz
10000
1000
C iss
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208oC/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4/4