K1158.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 K1158 데이타시트 다운로드

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2SK1157, 2SK1158
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S

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2SK1157, 2SK1158
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1157
2SK1158
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
7
28
7
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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2SK1157, 2SK1158
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1157 V(BR)DSS
2SK1158
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1157 IDSS
drain current
2SK1158
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1157 RDS(on)
on state resistance 2SK1158
2.0
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max Unit
——V
——V
±10 µA
— 250 µA
0.6
0.7
6.5
1050
280
40
15
55
95
40
0.95
3.0
0.8
0.9
320 —
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *1
ID = 4 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
3