K1158.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 K1158 데이타시트 다운로드

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2SK1157, 2SK1158
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S

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2SK1157, 2SK1158
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1157
2SK1158
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
7
28
7
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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2SK1157, 2SK1158
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1157 V(BR)DSS
2SK1158
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1157 IDSS
drain current
2SK1158
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1157 RDS(on)
on state resistance 2SK1158
2.0
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max Unit
——V
——V
±10 µA
— 250 µA
0.6
0.7
6.5
1050
280
40
15
55
95
40
0.95
3.0
0.8
0.9
320 —
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *1
ID = 4 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
3

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2SK1157, 2SK1158
Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V 7 V
6V
16
Pulse Test
12
5V
8
4
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
50
20
10
5
2
1.0
0.5
0.2
0.1
0.05
1
DC OpePrWatio=n1(0TCm1=sm2(s1150°sC0h)oµ1t0s) µs
Ta = 25°C
2SK1157
2SK1158
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
–25°C
16
VDS = 20 V
Pulse Test
TC = 25°C
12 75°C
8
4
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4

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Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
ID = 2 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6
ID = 10 A
1.2
0.8 2, 5 A
0.4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1157, 2SK1158
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1.0
0.5 15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
Drain Current ID (A)
50
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
–25°C
TC = 25°C
10
75°C
5
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10
5