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APTGT150SK170D1
Buck chopper
Trench IGBT® Power Module
VCES = 1700V
IC = 150A @ Tc = 80°C
Q1
4
5
3
1
2
321
4
5
7
6
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
- M5 power connectors
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operation Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
280
150
300
±20
780
300A@1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTGT150SK170D1
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 4mA
ICES Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
1700
V
4 mA
VCE(on)
VGE(th)
IGES
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 15V
IC = 150A
Tj = 25°C
Tj = 125°C
2.0 2.4
2.4
V
VGE = VCE , IC = 6 mA
5.2 5.8 6.4 V
VGE = 20V, VCE = 0V
200 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Cres
Td(on)
Tr
Td(off)
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eoff Turn Off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 25V
f = 1MHz
13
0.45
nF
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 150A
RG = 10
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 150A
RG = 10
280
100
850
120
330
100
1000
200
ns
ns
47 mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
Er Reverse Recovery Energy
IF = 150A
VGE = 0V
IF = 150A
VR = 900V
di/dt =900A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.8 2.2
1.9
17.5
35
V
mJ
Qrr Reverse Recovery Charge
IF = 150A
VR = 900V
di/dt =900A/µs
Tj = 25°C
Tj = 125°C
37.5
62.5
µC
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
For terminals
To Heatsink
Package Weight
IGBT
Diode
M5
M6
Min Typ Max Unit
0.16
0.25
°C/W
3500
V
-40 150
-40 125 °C
-40 125
2
3
3.5
5
N.m
180 g
APT website – http://www.advancedpower.com
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Package outline
APTGT150SK170D1
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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