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SSM6K405TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K405TU
High-Speed Switching Applications
Power Management Switch Applications
1.5V drive
Low ON-resistance: Ron = 307 m(max) (@VGS = 1.5V)
Ron = 214 m(max) (@VGS = 1.8V)
Ron = 164 m(max) (@VGS = 2.5V)
Ron = 126 m(max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
DC
Pulse
VDSS
VGSS
ID
IDP
PD (Note 1)
20
± 10
2.0
4.0
500
V
V
A
mW
Channel temperature
Storage temperature
Tch 150 °C
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
16
25
34
1, 2, 5, 6 : Drain
3 : Gate
UF6 4
: Source
JEDEC
JEITA
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateSource Charge
GateDrain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
Yfs
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Condition
ID = 1 mA, VGS = 0 V
ID = 1 mA, VGS = – 10 V
VDS = 20 V, VGS = 0 V
VGS = ± 10 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 1.0 A
ID = 1.0 A, VGS = 4.0 V
ID = 1.0 A, VGS = 2.5 V
ID = 0.5 A, VGS = 1.8 V
ID = 0.3 A, VGS = 1.5 V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, ID= 2.0 A
VGS = 4 V
VDD = 10 V, ID = 0.5 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
ID = − 2.0 A, VGS = 0 V
(Note2)
Min Typ. Max
20 ⎯ ⎯
12 ⎯ ⎯
⎯⎯
1
⎯ ⎯ ±1
0.35
1.0
2.6 5.2
90 126
115 164
150 214
185 307
195
35
29
3.4
2.3
1.1
8.0
9.0
– 0.85 – 1.2
Unit
V
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1 2007-11-01

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Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
IN
0
10 μs
VDD = 10 V
RG = 4.7 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
VDD (c) VOUT
2.5 V
0V
VDD
VDS (ON)
Marking
65
4
Equivalent Circuit (top view)
6 54
SSM6K405TU
10%
90%
10%
90%
tr
tf
ton toff
KKC
12
3
123
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2 2007-11-01

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ID – VDS
4
10 V
4.0 V 2.5 V Common Source
Ta = 25 °C
3 1.8 V
2 1.5 V
1
VGS = 1.2 V
0
0 0.2 0.4 0.6 0.8
1
Drain–source voltage VDS (V)
SSM6K405TU
ID – VGS
10
Common Source
VDS = 3 V
1
0.1
0.01
0.001
Ta = 100 °C
25 °C
25 °C
0.0001
0
1.0
Gate–source voltage VGS (V)
2.0
RDS (ON) – VGS
500
ID =1.0A
Common Source
400 Ta = 25°C
300
200
100
0
0
25 °C
Ta = 100 °C
25 °C
2 4 6 8 10
Gate–source voltage VGS (V)
RDS (ON) – ID
500
Common Source
Ta = 25°C
400
300
1.5 V
200
1.8 V
2.5 V
100
VGS = 4.0 V
0
0123
Drain current ID (A)
4
RDS (ON) – Ta
400
Common Source
300 0.3 A / 1.5 V
200 0.5 A / 1.8 V
1.0 A / 2.5 V
100 ID = 1.0 A / VGS = 4.0 V
0
50 0 50 100 150
Ambient temperature Ta (°C)
Vth – Ta
1.0
Common Source
VDS = 3V
ID = 1 mA
0.5
0
50 0 50 100 150
Ambient temperature Ta (°C)
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