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SSM6K411TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K411TU
Power Management Switch Applications
High-Speed Switching Applications
2.5-V drive
Low ON-resistanceRDS(ON) = 23.8 m(max) (@VGS = 2.5 V)
RDS(ON) = 14.3 m(max) (@VGS = 3.5 V)
RDS(ON) = 12 m(max) (@VGS = 4.5 V)
2.1±0.1
1.7±0.1
Unit: mm
16
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
25
34
Drain-Source voltage
VDSS 20 V
Gate-Source voltage
VGSS ±12 V
Drain current
DC
Pulse
ID (Note1)
IDP(Note1)
10
20
A
Power dissipation
Channel temperature
PD (Note2)
t<10s
Tch
1
2
150
W
°C
UF6
1,2,5,6 Drain
3 Gate
4 Source
Storage temperature range
Tstg
55 to 150
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 7.0 mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
654
KNI
123
Equivalent Circuit (top view)
654
123
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Electrical Characteristics(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
Symbol
Test Conditions
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
|Yfs|
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs1
Qgd
ton
toff
VDSF
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -12 V
VDS = 20 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 2.0 A
ID = 7.0 A, VGS = 4.5 V
ID = 6.0 A, VGS = 3.5 V
ID = 4.0 A, VGS = 2.5 V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, ID= 10 A
VGS = 4.5 V
VDD = 10 V, ID = 2 A
VGS = 0 to 2.5 V, RG = 4.7 Ω
ID = -10 A, VGS = 0 V(Note 3)
Min
20
8
0.5
6.5
SSM6K411TU
Typ. Max Unit
⎯ ⎯V
⎯⎯
10 μA
⎯ ±0.1 μA
1.2 V
13 S
8.7 12
10.5 14.3 mΩ
15.5 23.8
710
240 pF
170
9.4
1.9 nC
4.1
32 ns
23
-0.8 -1.2 V
Switching Time Test Circuit
(a) Test Circuit
2.5 V
IN
0
10 μs
(b) VIN
OUT
VDD = 10 V
RG = 4.7 Ω
Duty 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
(c) VOUT
VDD
2.5 V
0V
VDD
VDS (ON)
10%
90%
90%
10%
tr
tf
ton toff
Notice on Usage
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1 mA for the
SSM6K411TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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20
VGS =12 V
16
4.5 V
12
ID – VDS
3.5 V
2.5 V
8
1.8 V
4
Common Source
Ta = 25 °C
Pulse test
0
0 0.1 0.2 0.3 0.4 0.5
Drain-source voltage VDS (V)
SSM6K411TU
100000
Common Source
VDS = 3 V
10000 Pulse test
ID – VGS
1000
100
10
1
0.1
0
Ta = 100°C
25°C
-25°C
0.5 1 1.5 2
Gate-source voltage VGS (V)
2.5
RDS (ON) – VGS
80
ID = 4.0A
Common Source
Pulse test
60
40
20 25°C
Ta = 125°C
25°C
0
0 2 4 6 8 10 12
Gate-source voltage VGS (V)
RDS (ON) – ID
40
Common Source
Ta = 25 °C
Pulse test
30
20 VGS = 2.5 V
3.5 V
10
4.5 V
0
0 5 10 15
Drain current ID (A)
20
30
Common Source
Pulse Test
25
RDS (ON) – Ta
ID = 4.0 A / VGS = 2.5 V
20
15 6.0 A / 3.5 V
10
7.0 A / 4.5 V
5
0
50 0 50 100 150
Ambient temperature Ta (°C)
3
Vth – Ta
2.0
Common Source
VDS = 3 V
ID = 1 mA
1.0
0
50 0 50 100 150
Ambient temperature Ta (°C)
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100
Common Source
VDS = 3 V
30 Ta = 25 °C
Pulse test
10
|Yfs| – ID
3.0
1.0
0.3
0.1
0.01
0.1 1 10
Drain current ID (A)
100
SSM6K411TU
IDR – VDS
100
10
1
0.1
0.01
0.001
0
100 °C
-0.2
25 °C
25 °C
-0.4 -0.6
Common Source
VGS = 0 V
Pulse Test
D
G IDR
S
-0.8 -1.0 -1.2
Drain-source voltage VDS (V)
5000
3000
C – VDS
1000
500
300
100
Ciss
Coss
Crss
50
Common Source
30 Ta = 25 °C
f = 1 MHz
10 VGS = 0 V
0.1
1
10
Drain-source voltage VDS (V)
100
1000
toff
tf
100
t – ID
ton
10
tr
1
0.01
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
0.1 1
10
Drain current ID (A)
4
Dynamic Input Characteristic
12
10
8 VDD = 10 V
VDD = 16 V
6
4
2 Common Source
ID = 10 A
Ta = 25 °C
0 0 10 20 30
Total Gate Charge Qg (nC)
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rth – tw
600
100
10
1
0.001
0.01
Single pulse
Mounted on FR 4 board
(25.4mm × 25.4mm × 1.6mm,
Cu Pad : 645 mm2)
0.1 1 10 100 1000
Pulse width tw (s)
SSM6K411TU
2.5
10 s
2
1.5
DC
1
0.5
PD – Ta
Mounted on FR4 board
(25.4mm×25.4mm×1.6mm ,
Cu Pad : 645 mm2)
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
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