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SSM6G18NU
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM6G18NU
Power Management Switch Applications
Combined a P-channel MOSFET and a schottky barrier diode in one
package.
Low RDS (ON) and Low VF
RDS(ON) = 261 m (max) (@VGS = -1.5V)
RDS(ON) = 185 m (max) (@VGS = -1.8 V)
RDS(ON) = 143 m (max) (@VGS = -2.5 V)
RDS(ON) = 112 m (max) (@VGS = -4.5 V)
2.0 0.1
Unit: mm
B
A
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Symbol
VDSS
VGSS
ID (Note 1)
IDP (Note 1)
PD(Note 2)
t 10s
Tch
Rating
20
±8
2.0
4.0
1
2
150
Schottky Barrier Diode(Ta = 25°C)
Characteristics
Reverse voltage
Average forward current
Peak one cycle surge forward
current(10ms)
Junction temperature
Symbol
VR
IO
IFSM
Tj
Rating
30
1.0
5.0
150
Unit
V
V
A
W
°C
Unit
V
A
A
°C
MOSFET and Diode (Ta = 25°C)
Characteristics
Storage temperature range
Symbol
Tstg
Rating
55 to 150
Unit
°C
*BOTTOM VIEW
1
0.65 0.65
0.95
23
0.13
0 0.05
6
0.3 0.075
0.05 M A B
54
0.65 0.075 0.65 0.075
0.05 M A B
1. Anode
2. NC
3. Drain
4. Source
5. Gate
6. Cathode
UDFN6
JEDEC
JEITA
TOSHIBA
2-2Y1A
Weight: 8.5 mg (typ.)
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
The junction temperature should not exceed 150°C during use.
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645mm2)
1 2010-09-30

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SSM6G18NU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min Typ. Max
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
Yfs
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs1
Qgd
ton
toff
VDSF
ID = -1 mA, VGS = 0 V
ID = -1 mA, VGS = 5 V
VDS = -20 V, VGS = 0 V
VGS = ± 8 V, VDS = 0 V
VDS = -3 V, ID = -1 mA
VDS = -3 V, ID = -1.0 A
ID = -1.0 A, VGS = -4.5 V
ID = -0.6A, VGS = -2.5 V
ID = -0.4 A, VGS = -1.8 V
ID = -0.2 A, VGS = -1.5 V
(Note 4)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, ID = 2.0 A
VGS = 4.5 V
VDD = -10 V, ID = -1.0 A
VGS = 0 to -2.5 V, RG = 4.7 Ω
ID = 2.0 A, VGS = 0 V
(Note 3)
-20
-15
-0.3
2.7
5.4
89
107
128
148
270
40
32
4.6
0.4
0.9
17
43
0.86
-1
±1
-1.0
112
143
185
261
1.2
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode.
Note that the drain-source breakdown voltage is lowered in this mode
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
Switching Time Test Circuit
(a) Test circuit
0
IN
2.5 V
10 μs
OUT
VDD = −10 V
RG = 4.7 Ω
Duty <= 1%
VIN: tr, tf < 5 ns
Common source
Ta = 25°C
VDD
(b) VIN
0V
2.5 V
VDS (ON)
(c) VOUT
VDD
90%
10%
90%
10%
tr
tf
ton toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -1mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth.
(Relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
2 2010-09-30

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SSM6G18NU
Schottky Barrier Diode
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min Typ. Max Unit
Forward voltage
Reverse current
Total capacitance
Precaution
VF (1)
VF (2)
VF (3)
VF (4)
IR
CT
IF = 100 mA
IF = 200 mA
IF = 500 mA
IF = 1000 mA
VR = 30 V
VR = 0 V, f = 1 MHz
0.31
0.36
V
0.38 0.45
0.48 0.58
5 50 μA
120
pF
The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus,
excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both
forward and reverse loss into consideration.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
Marking(Top View)
65 4
KE2
1 23
Polarity marking
Equivalent Circuit(Top View) Pin Condition(Top View)
65 4
CG S
C
D
1 23
A NC D
Polarity marking (on the top)
*Electrodes : on the bottom
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