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SSM6N37FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37FE
High-Speed Switching Applications
Analog Switching Applications
1.5-V drive
Suitable for high-density mounting due to compact package
Low ON-resistance
RDS(ON) = 5.60 (max) (@VGS = 1.5 V)
RDS(ON) = 4.05 (max) (@VGS = 1.8 V)
RDS(ON) = 3.02 (max) (@VGS = 2.5 V)
RDS(ON) = 2.20 (max) (@VGS = 4.5 V)
単位: mm
1.6±0.05
1.2±0.05
16
25
34
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
VDSS
VGSS
ID
IDP
PD (Note 1)
Tch
Tstg
20
± 10
250
500
150
150
55 to 150
V
V
mA
mW
°C
°C
ES6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
JEITA
TOSHIBA
2-2N1D
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 3.0 mg (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking
65
4
Equivalent Circuit (top view)
6 54
SU
Q1
Q2
123
1 23
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SSM6N37FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
|Yfs|
RDS (ON)
Ciss
Coss
Crss
ton
toff
VDSF
ID = 1 mA, VGS = 0 V
ID = 1 mA, VGS = -10 V
VDS = 20 V, VGS = 0 V
VGS = ±10 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 100 mA (Note 2)
ID = 100 mA, VGS = 4.5 V (Note 2)
ID = 50 mA, VGS = 2.5 V (Note 2)
ID = 20 mA, VGS = 1.8 V (Note 2)
ID = 10 mA, VGS = 1.5 V (Note 2)
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, ID = 100 mA
VGS = 0 to 2.5 V, RG = 50 Ω
ID = -250 mA, VGS = 0 V (Note 2)
20
12
0.35
0.14
Typ.
0.28
1.65
2.16
2.66
3.07
12
5.5
4.1
18
36
-0.9
Max Unit
V
1 μA
±1 μA
1.0 V
S
2.20
3.02
Ω
4.05
5.60
pF
ns
-1.2 V
Switching Time Test Circuit (Q1, Q2 Common)
(a) Test Circuit
2.5 V
IN
0
10 μs
OUT
VDD = 10 V
RG = 50 Ω
D.U. 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
(b) VIN
2.5 V
0V
(c) VOUT VDD
VDD
VDS (ON)
10%
90%
90%
10%
tr
tf
ton toff
Precaution
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the
SSM6N37FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Do not use this device under avalanche mode. It may cause the device to break down.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (j-a) and drain power dissipation PD vary depending on board material, board area, board
thickness and pad area. When using this device, please take heat dissipation into consideration.
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(Q1, Q2 Common)
500
400
300
200
100
0
0
ID – VDS
10 V
4.5 V
2.5 V
1.8 V
1.5 V
VGS = 1.2 V
Common Source
Ta = 25 °C
0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V)
SSM6N37FE
1000
100
Ta = 100 °C
10
ID – VGS
1
0.1
0.01
0
25 °C
25 °C
Common Source
VDS = 3 V
1.0 2.0 3.0
Gate-source voltage VGS (V)
RDS (ON) – VGS
6
ID =100mA
5 Common Source
4
3 25 °C
2 Ta = 100 °C
1 25 °C
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
RDS (ON) – ID
6
Common Source
5 Ta = 25°C
4
1.5 V
1.8 V
3
2.5V
2
VGS = 4.5
1
0
0
100 200 300
400
Drain current ID (mA)
500
RDS (ON) – Ta
5
Common Source
ID = 10m A / VGS = 1.5 V
4 20m A / 1.8 V
50m A / 2.5 V
3
2
100m A / 4.5 V
1
0
50 0 50 100 150
Ambient temperature Ta (°C)
Vth – Ta
1.0
Common Source
VDS = 3 V
ID = 1 mA
0.5
0
50 0 50 100 150
Ambient temperature Ta (°C)
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