AP75N07GS.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 AP75N07GS 데이타시트 다운로드

No Preview Available !

Advanced Power
Electronics Corp.
AP75N07GP/S
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75N07GP) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
EAS
TSTG
TJ
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
75V
11mΩ
80A
G
D
S
TO-220(P)
G D S TO-263(S)
Rating
75
±20
80
56
300
156
1.25
450
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Max.
Max.
Value
0.8
62
Units
/W
/W
200519062-1/4

No Preview Available !

AP75N07GP/S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=40A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=75V, VGS=0V
VDS=60V, VGS=0V
VGS=±20V
ID=40A
VDS=60V
VGS=4.5V
VDD=40V
ID=30A
RG=10Ω,VGS=10V
RD=1.33Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
75 -
- 0.08
--
1-
- 40
--
--
--
- 83
- 10
- 51
- 15
- 73
- 340
- 200
- 4270
- 690
- 320
- 1.8
Max.
-
-
11
3
-
10
100
±100
130
-
-
-
-
-
-
6830
-
-
2.7
Units
V
V/
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Tj=25, IS=40A, VGS=0V
IS=40A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 90 - ns
- 235 -
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
2/4

No Preview Available !

280
T C = 25 o C
240
200
10V
7.0 V
5.0V
4.5V
160
120
80 V G =3.0V
40
0
0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I D =20A
T C =25 o C
16
12
8
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
15
T j =150 o C
10
T j =25 o C
5
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP75N07GP/S
240
T C = 150 o C
200
160
10V
7.0 V
5.0V
4.5V
120
V G =3.0V
80
40
0
0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =40A
V G =10V
1.6
1.2
0.8
0.4
25 50 75 100 125
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
13.0
150
12.0
V GS =4.5V
11.0 V GS =10V
10.0
9.0
0
20 40 60
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
80
3/4

No Preview Available !

AP75N07GP/S
14
12
ID=40A
10
V DS = 4 0 V
V DS = 48 V
8 V DS = 60 V
6
4
2
0
0 40 80 120 160 200
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
100us
10
T c =25 o C
Single Pulse
1ms
10ms
100ms
1s
DC
1
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
120
V DS =5V
T j =25 o C T j =150 o C
80
40
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4/4

No Preview Available !

富鼎先進電子股份有限公司
ADVANCED POWER ELECTRONICS CORP.
產 品 尺 寸 圖(無鉛)
Package Outline : TO-220 低壓
E1
E
φ L1
L2
L5
A
D
L4
b1
L3
L
SYMBOLS
Millimeters
MIN NOM MAX
A 4.25 4.48 4.70
b 0.65 0.80 0.90
c1 b1 1.15 1.38 1.60
c 0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
E1 --- --- 11.50
e ---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
L2 1.00 1.40 1.80
L3 2.6 3.10 3.6
L4 14.70 15.50 16
L5 6.30 6.50 6.70
φ 3.50 3.60 3.70
D 8.40 8.90 9.40
b
e
c
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220
LOGO
75N07GP
O
YWWSSS
Part Number
meet Rohs requirement
Package Code
Option
Date Code (ywwsss)
YLast Digit Of The Year
WW Week
SSSSequence
文件編號:QWQAD-7701
版 別:12
頁 碼:43