AP730P-HF-3.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 AP730P-HF-3 데이타시트 다운로드

No Preview Available !

Advanced Power
Electronics Corp.
AP730P-HF-3
N-channel Enhancement-mode Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP730P-HF-3 is in the TO-220 package, which is widely used
for commercial and industrial applications, and is well-suited for
high voltage applications such as switch mode power supplies, DC-AC
converters and high-current high-speed switching circuits.
G
D
S
400V
1.0
5.5A
TO-220 (P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
Rating
400
±30
5.5
3.5
23
74
0.59
260
5.5
7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Value
1.7
62
Unit
°C/W
°C/W
Ordering Information
AP730P-HF-3TB
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
RoHS-compliant halogen-free TO-220, shipped in tubes
200302192-3 1/7

No Preview Available !

Advanced Power
Electronics Corp.
AP730P-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
BV DSS/ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=2.75A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
VDS=10V, ID=2.75A
VDS=400V, VGS=0V
VDS=320V, VGS=0V
VGS= ± 30V
ID=5.5A
VDS=320V
VGS=10V
VDD=200V
ID=5.5A
RG=10, VGS=10V
RD=36
VGS=0V
Coss Output Capacitance
VDS=25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Min. Typ. Max. Units
400 - - V
- 0.36 - V/°C
- - 1
2 - 4V
- 30 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 35 - nC
- 3.7 - nC
- 20 - nC
- 8 - ns
- 20 - ns
- 47 - ns
- 18 - ns
- 565 - pF
- 70 - pF
- 38 - pF
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25°C, IS=5.5A, VGS=0V
Min. Typ. Max. Units
- - 5.5 A
- - 23 A
- - 1.5 V
Notes:
1.Pulse width limited by maximum junction temperature.
2.Starting Tj =25°C, VDD=50V, L=15mH , RG=25, IAS=5.5A.
2.Pulse test - pulse width < 300µs , duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/7

No Preview Available !

Advanced Power
Electronics Corp.
Typical Electrical Characteristics
AP730P-HF-3
7
T C =25 o C
6
5
V G =10V
V G =7.0V
V G =6.0V
4
3
V G =5.0V
2
1
V G =4.0V
0
0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
T C =150 o C
3
2
V G =10V
V G =7.0V
V G =6.0V
V G =5.0V
1
V G =4.0V
0
0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS vs.
Junction Temperature
150
3
I D =2.75A
2.5 V G =10V
2
1.5
1
0.5
0
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
3/7

No Preview Available !

Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP730P-HF-3
6
5
4
3
2
1
0
25 50 75 100 125 150
T c , Case Temperature ( o C )
Fig 5. Maximum Drain Current vs.
Case Temperature
80
60
40
20
0
0 50 100 150
T c , Case Temperature ( o C )
Fig 6. Typical Power Dissipation
100 1
DUTY=0.5
10
10us
1
T c =25 o C
Single Pulse
0
1 10
100
V DS (V)
100us
1ms
10ms
100ms
1000
10000
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
4/7

No Preview Available !

Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP730P-HF-3
16
I D =5.5A
14
12
10
8
V DS =80V
V DS =120V
V DS =160V
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10000 f=1.0MHz
Ciss
100
Coss
Crss
1
1 11 21 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3.6
3.1
2.6
2.1
1.6
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
5/7