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Ordering number : EN1766D
2SA1407 / 2SC3601
SANYO Semiconductors
DATA SHEET
2SA1407 / 2SC3601
Applications
Ultrahigh-definition CRT display.
Video output.
Color TV chroma output.
Wide-band amp.
PNP / NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display
Video Output Applications
Features
High fT : fT typ=400MHz.
High breakdown voltage : VCEO200V.
Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP).
Complementary PNP and NPN types.
Adoption of FBET process.
Specifications ( ) : 2SA1407
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)200
(--)200
(--)4
(--)150
(--)300
1.2
7
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70208AA TI IM TC-00001493 / 71598HA(KT)/90495MO(KOTO)/3277KI/D105MW/2225MW, TS 8-7231 No.1766-1/5

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2SA1407 / 2SC3601
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverce Transfer Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
Cre
VCB=(--)150V, IE=0A
VEB=(--)2V, IC=0A
VCE=(--)10V, IC=(--)10mA
VCE=(--)10V, IC=(--)100mA
VCE=(--)30V, IC=(--)50mA
IC=(--)50mA, IB=(--)5mA
IC=(--)50mA, IB=(--)5mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)100μA, IC=0A
VCB=(--)30V, f=1MHz
VCB=(--)30V, f=1MHz
* : The 2SA1407/2SC3601 are classified by 10mA hFE as follows :
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
F
160 to 320
Package Dimensions
unit : mm (typ)
7515-002
8.0
3.0 4.0
2.7
min
40*
20
(--)200
(--)200
(--)4
Ratings
typ
max
(--)0.1
(--)1.0
320*
400
(--0.8)0.6
(--)1.0
(3.0)2.5
(2.5)2.0
Unit
μA
μA
MHz
V
V
V
V
V
pF
pF
1.6
0.8
0.8
0.6
123
2.4
4.8
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
--50
2SA1407
--40
IC -- VCE
--300μA
--250μA
--200μA
--30
--150μA
--20
--100μA
--10 --50μA
IB=0μA
0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Collector-to-Emitter Voltage, VCE -- V ITR03495
50
2SC3601
IC -- VCE
500μA
450μA
400μA
40
350μA
300μA
30
250μA
20 200μA
150μA
10 100μA
50μA
IB=0μA
0 0 2 4 6 8 10 12 14 16 18 20
Collector-to-Emitter Voltage, VCE -- V ITR03496
No.1766-2/5

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--160
--140
--120
--100
--80
--60
--40
--20
0
0
3
2
2SA1407 / 2SC3601
IC -- VBE
2SA1407
VCE= --10V
160
140
120
100
80
60
40
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE -- V ITR03497
hFE -- IC
2SA1407
VCE= --10V
20
0
0
3
2
IC -- VBE
2SC3601
VCE=10V
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR03498
hFE -- IC
2SC3601
VCE=10V
100
7
5
3
2
100
7
5
3
2
10
7
5
3
1000
7
5
5 7 --10
23
5 7 --100 2 3
5
Collector Current, IC -- mA
ITR03499
f T -- IC
2SA1407
VCE= --30V
10
7
5
3
1000
7
5
5 7 10
23
5 7 100
23
5
Collector Current, IC -- mA
ITR03500
f T -- IC
2SC3601
VCE=30V
33
22
100
7
5
3
2
10
7
5
3
2
5 7 --10
23
5 7 --100
23
Collector Current, IC -- mA
ITR03501
Cob, Cre -- VCB
2SA1407
f=1MHz
Cob
Cre
1.0
7
5 5 7 --1.0
23
5 7 --10 2 3
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03503
100
7
5
3 5 7 10
23
5 7 100
23
Collector Current, IC -- mA
ITR03502
Cob, Cre -- VCB
2
2SC3601
f=1MHz
10
7
5
3 Cob
2 Cre
1.0
7
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR03504
No.1766-3/5