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SUel.eLc.teRdEPFCailecOk#aGEg7eN1sI6*Z3E9 D
T H E R M O TA B
TO-220AB
TO-202AB
TO - 92
MT2
MT1
G
Triacs
(0.8 – 25 Amps)
2
General Description
These gated triacs from Teccor Electronics are part of a broad
line of bidirectional semiconductors. The devices range in current
ratings from 0.8 to 25 amperes and in voltages from 200 to 800
volts.
The triac may be gate triggered from a blocking to conduction
state for either polarity of applied voltage and is designed for AC
switching and phase control applications such as speed and tem-
perature modulation controls, lighting controls and static switch-
ing relays. The triggering signal is normally applied between the
gate and MT1.
Teccor's gated triacs are available in a choice of different pack-
ages as shown above. Isolated packages are offered with inter-
nal construction, having the case or mounting tab electrically
isolated from the semiconductor chip. This feature facilitates the
use of low-cost assembly and convenient packaging techniques.
Tape-and-reel capability is available. See “Packing Options” sec-
tion of this catalog.
All Teccor triacs have glass-passivated junctions to ensure long
term device reliability and parameter stability. Teccor's glass
offers a rugged, reliable barrier against junction contamination.
Variations of devices covered in this data sheet are available for
custom design applications. Please consult factory for more
information.
Features
• Electrically-isolated packages
• Glass-passivated junctions
• Voltage capability — up to 800 Volts
• Surge capability — up to 200 Amps
Teccor Electronics, Inc.
(972) 580-7777
2-1
Triacs

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Electrical Specifications
IT(RMS)
RMS
On-State
Current
Conduc-
tion
Angle of
360°
(4)
MAX
0.8
Amp
1.0
Amp
4.0
Amps
6.0
Amps
8.0
Amps
Part Number
Isolated
Non-Isolated
MT2 MT2
VDRM
Repetitive
Peak
Blocking
Voltage
(1)
MT1 MT2
G
MT1 G
MT2
MT1 G
MT2
MT1 G
MT2
THERMOTAB
TO-92 TO-220AB TO-202AB TO-220AB
See “Package Dimensions” section for
variations.
Q2X8E3
Q4X8E3
Q5X8E3
Q6X8E3
Q2X8E4
Q4X8E4
Q5X8E4
Q6X8E4
Q201E3
Q401E3
Q501E3
Q601E3
Q201E4
Q401E4
Q501E4
Q601E4
Q2004L3 Q2004F31
Q4004L3 Q4004F31
Q5004L3 Q5004F31
Q6004L3 Q6004F31
Q2004L4 Q2004F41
Q4004L4 Q4004F41
Q5004L4 Q5004F41
Q6004L4 Q6004F41
Q7004L4
Q8004L4
Q2006L4 Q2006F41 Q2006R4
Q4006L4 Q4006F41 Q4006R4
Q5006L4 Q5006F41 Q5006R4
Q6006L5 Q6006F51 Q6006R5
Q7006L5
Q7006R5
Q8006L5
Q8006R5
Q2008L4 Q2008F41 Q2008R4
Q4008L4 Q4008F41 Q4008R4
Q5008L4 Q5008F41 Q5008R4
Q6008L5 Q6008F51 Q6008R5
Q7008L5
Q7008R5
Q8008L5
Q8008R5
Volts
MIN
200
400
500
600
200
400
500
600
200
400
500
600
200
400
500
600
200
400
500
600
200
400
500
600
700
800
200
400
500
600
700
800
200
400
500
600
700
800
IGT
DC Gate Trigger Current
in Specific
Operating Quadrants
VD = 12VDC
RL = 60
(3) (7)
mAmps
QI QII QIII QIV QIV
MAX
10 10 10
10 10 10
10 10 10
10 10 10
25 25 25
25 25 25
25 25 25
25 25 25
10 10 10
10 10 10
10 10 10
10 10 10
25 25 25
25 25 25
25 25 25
25 25 25
10 10 10
10 10 10
10 10 10
10 10 10
25 25 25
25 25 25
25 25 25
25 25 25
25 25 25
25 25 25
25 25 25
25 25 25
25 25 25
50 50 50
50 50 50
50 50 50
25 25 25
25 25 25
25 25 25
50 50 50
50 50 50
50 50 50
TYP
25
25
25
25
50
50
50
50
25
25
25
25
50
50
50
50
25
25
25
25
50
50
50
50
50
50
50
50
50
75
75
75
50
50
50
75
75
75
See General Notes and Electrical Specification Notes on page 2-4.
IDRM
Peak Off-State
Current
Gate Open
VDRM = Max
Rated Value
(1) (16)
VTM
Peak On-State
Voltage at
Max Rated
RMS
Current
TC = 25°C
(1) (5)
VGT
DC Gate
Trigger
Voltage
VD = 12VDC
RL = 60
(2) (6) (18)
TC =
25°C
mAmps
TC = TC =
100°C 125°C
Volts
Volts
TC = TC =
125°C 25°C
MAX
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.02 0.5 1.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
.05 0.5 2.0
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
MIN MAX
0.2 2.0
0.2 2.0
0.2 2.0
0.2 2.0
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.0
0.2 2.0
0.2 2.0
0.2 2.0
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.0
0.2 2.0
0.2 2.0
0.2 2.0
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
0.2 2.5
Triacs
2-2 Teccor Electronics, Inc.
(972) 580-7777

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Triacs
IH
IGTM
PGM PG(AV)
ITSM
dv/dt (c)
Holding
Current Peak Gate
(DC) Gate Trigger
Open
Current
(1) (8) (12) (14)
Peak One Cycle Surge
Peak Gate Average
(9) (13)
Power Dis- Gate Power
sipation Dissipation
(14)
IGT IGTM
Critical Rate-of-Rise of
Commutation Voltage at
Rated VDRM and IT(RMS)
Commutating di/dt = 0.54
Rated IT(RMS)/ms
Gate Unenergized
(1) (4) (13)
mAmps
Amps
MAX
15
15
15
15
25
25
25
25
15
15
15
15
25
25
25
25
20
20
20
20
30
30
30
30
30
30
50
50
50
50
50
50
50
50
50
50
50
50
Amps
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.6
1.6
1.6
1.6
1.6
1.6
1.8
1.8
1.8
1.8
1.8
1.8
Watts
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
15
15
15
15
15
15
15
15
15
15
18
18
18
18
18
18
20
20
20
20
20
20
Watts
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
60Hz
10
10
10
10
10
10
10
10
20
20
20
20
20
20
20
20
55
55
55
55
55
55
55
55
55
55
80
80
80
80
80
80
100
100
100
100
100
100
50Hz
8.3
8.3
8.3
8.3
8.3
8.3
8.3
8.3
16.7
16.7
16.7
16.7
16.7
16.7
16.7
16.7
46
46
46
46
46
46
46
46
46
46
65
65
65
65
65
65
83
83
83
83
83
83
See General Notes and Electrical Specification Notes on page 2-4.
Volts/µSec
TYP
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
dv/dt
Critical Rate-of-
Rise of Off-State
Voltage at Rated
VDRM
Gate Open
(1)
Volts/µSec
TC=
100°C
TC=
125°C
tgt I2t di/dt
Gate
Controlled
Turn-On
Time
IGT =
200mA
0.1µs Rise
Time
(10)
RMS Surge Maximum
(Non-
Rate-of-
Repetitive) Change of
On-State Cur- On-State Cur-
rent for
rent
Period of
8.3ms for
IGT = 200mA
with 0.1µs
Fusing
Rise Time
µSec
MIN
TYP
Amp2Sec Amps/µSec
40 30 2.5
0.41
20
35 25 2.5
0.41
20
30 20 2.5
0.41
20
25 15 2.5
0.41
20
50 40
3
0.41
20
45 35
3
0.41
20
40 30
3
0.41
20
35 25
3
0.41
20
40 30 2.5
1.6
30
40 30 2.5
1.6
30
30 20 2.5
1.6
30
30 20 2.5
1.6
30
50 40
3
1.6
30
50 40
3
1.6
30
40 30
3
1.6
30
40 30
3
1.6
30
50 40 2.5
12.5
50
50 40 2.5
12.5
50
40 30 2.5
12.5
50
40 30 2.5
12.5
50
100 75
3
12.5
50
100 75
3
12.5
50
75 50
3
12.5
50
75 50
3
12.5
50
60 40
3
12.5
50
60 40
3
12.5
50
200 120
3
26.5
70
200 120
3
26.5
70
150 100
3
26.5
70
150 100
3
26.5
70
125 85
3
26.5
70
125 85
3
26.5
70
250 150
3
41
70
250 150
3
41
70
220 125
3
41
70
220 125
3
41
70
150 100
3
41
70
150 100
3
41
70
Teccor Electronics, Inc.
(972) 580-7777
2-3
Triacs

No Preview Available !

Electrical Specifications
IT(RMS)
RMS
On-State
Current
Conduction
Angle of
360°
(4) (16)
MAX
10.0
Amps
15.0
Amps
25.0
Amps
Isolated
Part Number
Non-Isolated
MT2
MT2
VDRM
Repeti-
tive Peak
Blocking
Voltage
(1)
IGT
DC Gate Trigger Current
In Specific
Operating Quadrants
VD = 12VDC
(3) (7) (15)
IDRM
VGT
Peak Off-State Current DC Gate Trig-
Gate Open VDRM = Max ger Voltage
Rated Value
VD = 12VDC
(1) (16)
(2) (6) (15) (18)
MT1 G
MT2
MT1 G
MT2
MT1 G
MT2
THERMOTAB
TO-220AB
TO-202AB
TO-220AB
See “Package Dimensions” section for variations.
Q2010L5
Q2010F51
Q2010R5
Q4010L5
Q4010F51
Q4010R5
Q5010L5
Q5010F51
Q5010R5
Q6010L5
Q6010F51
Q6010R5
Q7010L5
Q7010R5
Q8010L5
Q8010R5
Q2015L5
Q2015R5
Q4015L5
Q4015R5
Q5015L5
Q5015R5
Q6015L5
Q6015R5
Q7015L5
Q7015R5
Q8015L5
Q8015R5
Q2025R5
Q4025R5
Q5025R5
Q6025R5
Q7025R5
Q8025R5
Volts
MIN
200
400
500
600
700
800
200
400
500
600
700
800
200
400
500
600
700
800
mAmps
mAmps
Volts
TC = TC = TC = TC = TC =
QI QII QIII QIV QIV 25°C 100°C 125°C 125°C 25°C
MAX
TYP
MAX
MIN MAX
50 50 50
75 .05 0.5 2.0 0.2 2.5
50 50 50
75 .05 0.5 2.0 0.2 2.5
50 50 50
75 .05 0.5 2.0 0.2 2.5
50 50 50
75 .05 0.5 2.0 0.2 2.5
50 50 50
75 .05 0.5 2.0 0.2 2.5
50 50 50
75 0.1 0.5 2.0 0.2 2.5
50 50 50
.05 0.5 2.0 0.2 2.5
50 50 50
.05 0.5 2.0 0.2 2.5
50 50 50
.05 0.5 2.0 0.2 2.5
50 50 50
.05 0.5 2.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
50 50 50
0.1 1.0 3.0 0.2 2.5
General Notes
• All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25°C unless specified otherwise.
• Operating temperature range (TJ) is -65°C to +125°C for TO-92,
and -40°C to +125°C for all other devices
• Storage temperature range (TS) is -65°C to +150°C for TO-92, and
-40°C to +150°C for TO-202 devices, and -40°C to +125°C for all
other devices.
• Lead solder temperature is a maximum of 230°C for 10 seconds,
maximum; 1/16" (1.59mm) from case
• The case temperature (TC) is measured as shown on the dimen-
sional outline drawings. See “Package Dimensions” section of this
catalog.
Electrical Specification Notes
(1) For either polarity of MT2 with reference to MT1 terminal.
(2) For either polarity of gate voltage (VGT) with reference to MT1
terminal.
(3) See Definition of Quadrants.
(4) See Figures 2.1 through 2.7 for current rating at specific operating
temperature.
(5) See Figures 2.8 through 2.10 for iT vs vT.
(6) See Figure 2.12 for VGT vs TC.
(7) See Figure 2.11 for IGT vs TC.
(8) See Figure 2.14 for IH vs TC.
(9) See Figure 2.13 for surge rating with specific durations.
(10) See Figure 2.15 for tgt vs IGT.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) Initial on-state current = 200mA(DC) for 0.8 -10 amp devices,
400 mA(DC) for 15 amp to 25 amp devices.
(13) See Figures 2.1 through 2.6 for maximum allowable case
temperature at maximum rated current.
(14) Pulse width 10µs.
(15) RL = 60for 0.8-10 amp triacs; RL = 30for 15-25 amp triacs.
(16) TC= TJ for test conditions in off-state.
(17) IGT=500 mA for 25 amp devices.
(18) Quadrants I, II, and III only.
Triacs
2-4 Teccor Electronics, Inc.
(972) 580-7777

No Preview Available !

Triacs
VTM
IH
IGTM
PGM PG(AV)
Peak On-
State Voltage
at Maximum
Rated RMS
Current
TC = 25°C
(1) (5)
Holding
Current
(DC) Gate
Open
(1) (8) (12)
Peak Gate Peak Gate
Trigger Current Power
(14) Dissipation
(14)
IGT IGTM
Average
Gate
Power
Dissipa-
tion
Volts
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.8
1.8
1.8
1.8
1.8
1.8
mAmps
MAX
50
50
50
50
50
50
70
70
70
70
70
70
100
100
100
100
100
100
Amps
1.8
1.8
1.8
1.8
1.8
1.8
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Watts
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
Watts
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
ITSM
Peak
One-Cycle
Surge
(9) (13)
Amps
60Hz 50Hz
120 100
120 100
120 100
120 100
120 100
120 100
200 167
200 167
200 167
200 167
200 167
200 167
200 167
200 167
200 167
200 167
200 167
200 167
dv/dt(c)
dv/dt
tgt I2t di/dt
Critical Rate-of-Rise
of Commutation
Voltage at Rated
VDRM & IT(RMS)
Commutating
di/dt = 0.54
Rated IT(RMS)/ms
Gate Unenergized
(1) (4) (13)
Volts/µSec
Critical Rate-of-
Rise of Off-State
Voltage at Rated
VDRM Gate Open
(1)
Volts/µSec
TC = TC =
100°C 125°C
Gate
Controlled
Turn-On
Time
IGT = 200mA
0.1µs Rise
Time
(10) (17)
µSec
RMS Maximum
Surge
Rate-of-
(Non- Change of
Repeti- On-State
tive) On- Current
State for IGT = 200mA
Period of with 0.1µs
8.3ms For Rise Time
Fusing
Amps2Sec Amps/µSec
TYP
MIN TYP
4
350 225
3
60 70
4
350 225
3
60 70
4
300 200
3
60 70
4
300 200
3
60 70
4
250 175
3
60 70
4
250 175
3
60 70
4
400 275
4
166 100
4
400 275
4
166 100
4
350 225
4
166 100
4
350 225
4
166 100
4
300 200
4
166 100
4
300 200
4
166 100
5
400 275
4
166 100
5
400 275
4
166 100
5
350 225
4
166 100
5
350 225
4
166 100
5
300 200
4
166 100
5
300 200
4
166 100
Teccor Electronics, Inc.
(972) 580-7777
2-5
Triacs