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SVD1N80B/F/M/T_Datasheet
1A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N80B/F/M/T is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
2
1
3 TO-220-3L
1.Gate 2.Drain 3.Source
TO-251-3L
TO-220F-3L
FEATURES
1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
TO-92-3L
ORDERING INFORMATION
Part No.
SVD1N80M
SVD1N80T
SVD1N80B
SVD1N80BTR
SVD1N80F
Package
TO-251-3L
TO-220-3L
TO-92-3L
TO-92-3L
TO-220F-3L
Marking
SVD1N80M
SVD1N80T
1N80B
1N80B
SVD1N80F
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Bulk
AMMO
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
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SVD1N80B/F/M/T_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy
(Note 1)
Operation Junction Temperature
Range
Storage Temperature Range
Rating
Symbol
SVD1N80B SVD1N80F SVD1N80M SVD1N80T
VDS 800
VGS ±30
ID 1.0
IDM 4.0
9 23 33 45
PD 0.07 0.18 0.26 0.36
Unit
V
V
A
A
W
W/°C
EAS 23 mJ
TJ
-55+150
°C
Tstg
-55+150
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-
Case
Thermal Resistance, Junction-to-
Ambient
Rating
Symbol
SVD1N80B SVD1N80F SVD1N80M SVD1N80T
Unit
RθJC
13.89
4.43
3.79
2.78 °C/W
RθJA
120
120
110
62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
800
--
--
3.1
Typ.
--
--
--
--
Max.
--
10
±100
4.4
Unit
V
µA
nA
V
RDS(on) VGS=10V, ID=0.5A
-- 13.5 16
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=400V,ID=1.0A, RG=25Ω
(Note 2,3)
VDS=640V,ID=1.0A,
VGS=10V
(Note 2,3)
-- 160.9
-- 15.5
-- 1.35
-- 8.13
-- 15.13
-- 12.80
-- 20.93
-- 5.35
-- 1.28
-- 2.59
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
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SVD1N80B/F/M/T_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS=1.0A,VGS=0V
Trr IS=1.0A,VGS=0V,
Qrr dIF/dt=100A/µS (Note 2)
Notes:
1. L=30mH,IAS=1.17A,VDD=110V,RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width 300μs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
Typ.
--
--
Max.
1.0
4.0
Unit
A
-- -- 1.5 V
-- 160 -- ns
-- 0.3 -- µC
TYPICAL CHARACTERISTICS
1..0
0.1 1
Figure 1. On-Region Characteristics
Variable
VGS=4.0V
VGS=4.5V
VGS=5.0V
VGS=5.5V
VGS=6.0V
VGS=7.0V
VGS=8.0V
VGS=10V
VGS=15V
Notes:
1. 250μs Pulse Test
2. Tc=25 C
10
VDS Drain-source voltage[V]
Figure 2. Transfer Characteristics
10
-55 C
25 C
150 C
1
:
1. 250μs Pulse Test
2. VDS=40V
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
22
21
20 VGS= 10.0V
19 VGS= 20.0V
18
17
16
15
14
13
12
11
10
Note: TJ=25°C
9
8 0 0.5 1 1.5 2
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
10
-55 C
25 C
150 C
1
0.1
0.2
Notes:
1. 250μs Pulse Test
2. VGS=0V
0.4 0.6 0.8
1
1.2
VSD, Source-Drain voltage [V]
1.4
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SVD1N80B/F/M/T_Datasheet
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SVD1N80B/F/M/T_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 9-3. Max. Safe Operating Area(SVD1N80M)
101 Operation in This Area
is Limited by RDS(ON)
100µs
100 1ms
10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
VDS, Drain Source Voltage[V]
103
Figure 10. Maximum Drain Current vs. Case
Temperature
1.0
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
TC, Case Temperature[°C]
Figure 9-4. Max. Safe Operating Area(SVD1N80T)
101 Operation in This Area
is Limited by RDS(ON)
100µs
100 1ms
10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
VDS, Drain Source Voltage[V]
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
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