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STF10NK50Z
N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™
Power MOSFET in TO-220FP package
Datasheet — production data
Features
Order code VDSS RDS(on) max ID
STF10NK50Z 500 V < 0.7 Ω 9 A
PTOT
30 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitance
Applications
■ Switching application
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics’ SuperMESH™ technology,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2)
G(1)
Table 1. Device summary
Order code
STF10NK50Z
Marking
F10NK50Z
S(3)
AM01476v1
Package
TO-220FP
Packaging
Tube
March 2012
This is information on a product in full production.
Doc ID 022992 Rev 1
1/13
www.st.com
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Contents
Contents
STF10NK50Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 022992 Rev 1

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STF10NK50Z
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM(2)
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
Derating factor
ESD
dv/dt(3)
Gate-source human body model
(C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Operating junction temperature
Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤9 A, di/dt ≤200 A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAR, VDD=50 V)
Electrical ratings
Value
500
± 30
9 (1)
5.7 (1)
36 (1)
30
0.24
4
4.5
2500
-55 to 150
Unit
V
V
A
A
A
W
W/°C
kV
V/ns
V
°C
Value
4.2
62.5
Value
9
230
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 022992 Rev 1
3/13