STF10NK50Z
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM(2)
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
Derating factor
ESD
dv/dt(3)
Gate-source human body model
(C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Operating junction temperature
Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤9 A, di/dt ≤200 A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAR, VDD=50 V)
Electrical ratings
Value
500
± 30
9 (1)
5.7 (1)
36 (1)
30
0.24
4
4.5
2500
-55 to 150
Unit
V
V
A
A
A
W
W/°C
kV
V/ns
V
°C
Value
4.2
62.5
Value
9
230
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 022992 Rev 1
3/13