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TISP5070H3BJ THRU TISP5190H3BJ
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
TISP5xxxH3BJ Overvoltage Protector Series
Analogue Line Card and ISDN Protection
- Analogue SLIC
- ISDN U Interface
- ISDN Power Supply
8 kV 10/700, 200 A 5/310 ITU-T K.20/21/45 rating
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device Name
TISP5070H3BJ
TISP5080H3BJ
TISP5095H3BJ
TISP5110H3BJ
TISP5115H3BJ
TISP5150H3BJ
TISP5190H3BJ
VDRM
V
-58
-65
-75
-80
-90
-120
-160
V(BO)
V
-70
-80
-95
-110
-115
-150
-190
Rated for International Surge Wave Shapes
Wave Shape
Standard
2/10
8/20
10/160
10/700
10/560
10/1000
GR-1089-CORE
ANSI C62.41
TIA-968-A
ITU-T K.20/21/45
TIA-968-A
GR-1089-CORE
IPPSM
A
500
300
250
200
160
100
SMB Package (Top View)
A1
Device Symbol
2K
MD5UFCAB
K
SD5XAD
A
.............................................. UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or
lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide
protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point
protection of ISDN lines.
The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-
voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.
How to Order
Device
Package
Carrier
For Standard
For Lead Free
Termination Finish Termination Finish
Order As
Order As
BJ (J-Bend Embossed
TISP5xxxH3BJ DO-214AA/SMB) Tape Reeled TISP5xxxH3BJR
TISP5xxxH3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 110, 115 and 150.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Marking
Code
5xxxH3
Std.
Quantity
3000

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TISP5xxxH3BJ Overvoltage Protection Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol Value Unit
Repetitive peak off-state voltage (see Note 1)
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
VDRM
-58
-65
-75
-80
-90
-120
-160
V
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage waveshape)
0.2/310 µs (I3124, 0.5/700 µs waveshape)
5/310 µs (ITU-T K.44, 10/700 µs voltage waveshape used in K.20/21/45)
5/310 µs (FTZ R12, 10/700 µs voltage waveshape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
IPPSM
±500
±300
±250
±220
±200
±200
±200
±160
±100
A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms, 50 Hz (full sine wave)
16.7 ms, 60 Hz (full sine wave)
1000 s 50 Hz/60 Hz a.c.
ITSM
55
60 A
2.1
Initial rate of rise of on-state current, GR-1089-CORE 2/10 µs wave shape
Junction temperature
Storage temperature range
diT/dt
TJ
Tstg
±400 A/µs
-40 to +150 °C
-65 to +150 °C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the device must be in thermal equilibrium with TJ = 25 °C.
3. The surge may be repeated after the device returns to its initial conditions.
4. See Figure 10 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. See Figure 8 for current ratings at other
durations.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
IDRM Repetitive peak off-state current VD = VDRM
V(BO)
Breakover voltage
dv/dt = -250 V/ms, RSOURCE = 300
V(BO)
Impulse breakover voltage
dv/dt -1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
Min
TA = 25 °C
TA = 85 °C
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
Typ Max
-5
-10
-70
-80
-95
-110
-115
-150
-190
-80
-90
-105
-120
-125
-160
-200
Unit
µA
V
V
JANUARY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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TISP5xxxH3BJ Overvoltage Protection Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
I(BO)
VF
VFRM
Breakover current
Forward voltage
Peak forward recovery voltage
dv/dt = -250 V/ms, RSOURCE = 300
IF = 5 A, tW = 500 µs
dv/dt +1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt = +20 A/µs, Linear current ramp,
Maximum ramp value = +10 A
VT
IH
dv/dt
ID
On-state voltage
Holding current
Critical rate of rise of off-state voltage
Off-state current
IT = -5 A, tw = 500 µs
IT = -5 A, di/dt = +30 mA/ms
Linear voltage ramp, maximum ramp value < 0.85VDRM
VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -1 V
CO
Off-state capacitance
(see Note 6)
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V
Min Typ Max Unit
-150
-600 mA
3V
5V
-3 V
-150
-600 mA
-5 kV/µs
TA = 85 °C
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
-10
300 420
280 390
260 365
240 335
214 300
140 195
140 195
µA
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
260 365
245 345
225 315
205 285
180 250
120 170
120 170
pF
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
90 125
80 110
73 100
65 90
56 80
35 50
35 50
'5150H3BJ
'5190H3BJ
30 40
30 30
NOTE: 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly
dependent on connection inductance.
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
RθJA
NOTE:
Parameter
Test Conditions
Min Typ Max Unit
Junction to ambient thermal resistance
EIA/JESD51-3 PCB, IT = ITSM(1000)
(see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000)
113
°C/W
50
7. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JANUARY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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TISP5xxxH3BJ Overvoltage Protection Series
Parameter Measurement Information
+i
IPPSM
IFSM
IFRM
IF
VF
Quadrant I
Forward
Conduction
Characteristic
V(BR)M
-v
I(BR)
V(BR)
VDRM
IDRM
VD
ID
I(BO)
V(BO)
IH
VT
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
IPPSM
-i
Figure 1. Voltage-Current Characteristic for Terminal Pair
All Measurements are Referenced to the Thyristor Anode, A (Pin 1)
+v
PM -TI SP5x xx-001-a
JANUARY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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TISP5xxxH3BJ Overvoltage Protection Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC5XAFA
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC5XAIA
10
1.05
1
0·1
VD = -50 V
0·01
0·001
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 2.
150
ON-STATE AND FORWARD CURRENTS
vs
ON-STATE AND FORWARD VOLTAGES
200
150 TA = 25 °C
100 tW = 100 µs
70
50
40
30
20
15
10
7
5 VF
4
3
VT
2
1.5
1
0.7 1
1.5 2
3 4 5 7 10
TC5LAC VT , VF- On-State Voltage, Forward Voltage - V
Figure 4.
JANUARY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
1.00
0.95
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 3.
150
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC5XAD
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 5.
150