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TrenchMVTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTV200N10T
IXTV200N10TS
VDSS =
ID25 =
RDS(on)
100V
200A
5.5mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting force (PLUS220)
PLUS220 types
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
100
100
V
V
± 30 V
200 A
75 A
500 A
40 A
1.5 J
550 W
-55 ... +175
175
-55 ... +175
300
260
°C
°C
°C
°C
°C
11.65 / 2.5..14.6
N/lb.
4g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
5 μA
250 μA
4.5 5.5 mΩ
PLUS220 (IXFV)
GDS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low RDS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99714A(10/08)

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Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RthJC
RthCH
PLUS220
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS VGS = 0V
ISM Repetitive, Pulse width limited by TJM
VSD IF = 50A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 100A, VGS = 0V,-di/dt = 100A/μs
VR = 50V
Characteristic Values
Min. Typ. Max.
60 96
S
9400
1087
140
pF
pF
pF
35 ns
31 ns
45 ns
34 ns
152 nC
47 nC
47 nC
0.27 °C/W
0.21 °C/W
IXTV200N10T
IXTV200N10TS
PLUS220 (IXTV) Outline
Characteristic Values
Min. Typ. Max.
200 A
500 A
1.0 V
76 ns
205 nC
5.4 A
PLUS220SMD (IXTV_S) Outline
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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Fig. 1. Output Characteristics
@ 25ºC
200
180
VGS = 10V
9V
160 8V
140
120
7V
100
80
6V
60
40
20 5V
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
200
VGS = 10V
180 9V
8V
160
140
120 7V
100
80
6V
60
40
20 5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
VGS = 10V
15V - - - -
40 80 120 160 200
ID - Amperes
TJ = 175ºC
TJ = 25ºC
240 280 320
IXTV200N10T
IXTV200N10TS
Fig. 2. Extended Output Characteristics
@ 25ºC
350
VGS = 10V
300 9V
8V
250
200
7V
150
100
6V
50
5V
0
0123456
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 100A Value
vs. Junction Temperature
2.8
2.6 VGS = 10V
2.4
2.2
2.0
1.8 I D = 200A
1.6
1.4 I D = 100A
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
90
80 External Lead Current Limit
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved