D1271.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 D1271 데이타시트 다운로드

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Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB946 and 2SB946A
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1271
base voltage 2SD1271A
VCBO
130
150
Collector to 2SD1271
emitter voltage 2SD1271A
VCEO
80
100
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
7
15
7
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1271
voltage
2SD1271A
ICBO
IEBO
VCEO
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
IC = 5A, IB = 0.25A
IC = 5A, IB = 0.25A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
10 µA
50 µA
80
V
100
45
90 260
0.5 V
1.5 V
30 MHz
0.5 µs
1.5 µs
0.1 µs
1

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Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=20
30
10
3
1
TC=100˚C
0.3 25˚C
0.1
–25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
hFE — IC
VCE=2V
300
TC=100˚C
25˚C
100 –25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
IC — VCE
10
TC=25˚C
8
IB=55mA
6 50mA
45mA
40mA
35mA
4 30mA
20mA
15mA
2 10mA
5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1271, 2SD1271A
VCE(sat) — IC
(1) IC/IB=10
10 (2) IC/IB=20
TC=25˚C
3
1 (2)
(1)
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
VBE(sat) — IC
(1) IC/IB=10
10 (2) IC/IB=20
TC=25˚C
3
(1)
1 (2)
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10
Collector current IC (A)
30
VBE(sat) — IC
100
IC/IB=20
30
10
3
1 TC=–25˚C
100˚C
0.3 25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
2

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Power Transistors
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=10 (IB1=–IB2)
VCC=50V
10 TC=25˚C
3
1 tstg
ton
0.3 tf
0.1
0.03
0.01
0
1234567
Collector current IC (A)
8
Area of safe operation (ASO)
100
30
ICP
10 IC
Non repetitive pulse
TC=25˚C
t=0.5ms
3
10ms
1
1ms
0.3 DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SD1271, 2SD1271A
3