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HCC4073B/81B/82B
HCF4073B/81B/82B
AND GATES
4073B TRIPLE 3–INPUT AND GATE
4081B QUAD
2–INPUT AND GATE
4082B DUAL
4–INPUT AND GATE
. MEDIUM SPEED OPERATION – tPLH = 85ns
(typ.) ; tPHL = 65ns (typ.) AT 10V
. QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
. 5V, 10V, AND 15V PARAMETRIC RATINGS
. INPUT CURRENT OF 100nA AT 18V AND
25°C FOR HCC DEVICE
. 100% TESTED FOR QUIESCENT CURRENT
. MEETS ALL REQUIREMENTS OF JEDECTEN-
TATIVE STANDARD N° 13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
DESCRIPTION
The HCC4073B, HCC4081B and HCC4082B (ex-
tended temperature range) and the HCF4073B,
HCF4081B and HCF4082B (intermediate tempera-
ture range) are monolithic integrated circuits avail-
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC40XXBF
HCF40XXBM1
HCF40XXBEY
HCF40XXBC1
able in 14-lead dual in-line plastic or ceramic pack-
age and plastic micro package.
The HCC/HCF4073B, 4081B and 4082B AND
gates provide the system designer with direct im-
CONNECTION DIAGRAM
4073B
4081B
4082B
June 1989
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HCC/HCF4073B/4081B/4082B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD* Supply Voltage : HC C Types
H C F Types
– 0.5 to + 20
– 0.5 to + 18
V
V
Vi Input Voltage
II DC Input Current (any one input)
Pt o t Total Power Dissipation (per package)
Dissipation per Output Transistor
for To p = Full Package-temperature Range
T o p Operating Temperature : HCC Types
H CF Types
– 0.5 to VDD + 0.5
± 10
200
100
– 55 to + 125
– 40 to + 85
V
mA
mW
mW
°C
°C
Ts tg Storage Temperature
– 65 to + 150
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
r eli abil ity .
* All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VDD Supply Voltage : HC C Types
H CF Types
VI Input Voltage
T o p Operating Temperature : HCC Types
H CF Types
Value
3 to 18
3 to 15
0 to VDD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Symbol Parameter
Test Conditions
Value
VI VO |IO | VD D T L ow*
25 °C
T High*
(V) (V) (µA) (V) Min. Max. Min. Typ. Max. Min. Max.
Unit
IL Quiescent
0/ 5
Current HCC 0/10
Types 0/15
5
0.25 0.01 0.25
7.5
10 0.5 0.01 0.5 15
15 1 0.01 1 30
0/20 20 5 0.02 5 150 µA
0/ 5
HCF
Types
0/10
0/15
5
1 0.01 1
7.5
10 2 0.01 2 15
15 4 0.01 4 30
VOH Output High
Voltage
0/ 5
0/10
< 1 5 4.95
< 1 10 9.95
4.95
9.95
4.95
9.95 V
0/15
< 1 15 14.95
14.95
14.95
VOL Output Low
Voltage
5/0
10/0
<1 5
< 1 10
0.05
0.05
0.05 0.05
0.05 0.05 V
15/0
< 1 15
0.05
0.05 0.05
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
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HCC/HCF4073B/4081B/4082B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter
Test Conditions
VI VO |IO | VD D
(V) (V) (µA) (V)
T Low*
Min. Max.
Value
25 °C
Min. Typ. Max.
T High*
Min. Max.
Unit
VIH Input High
Voltage
0.5/4.5 < 1 5 3.5
1/9 < 1 10 7
3.5
7
3.5
7V
1.5/13.5 < 1 15 11
11
11
VIL Input Low
Voltage
4.5/0.5 < 1 5
9/1 < 1 10
1.5
3
1.5 1.5
3 3V
13.5/1.5 < 1 15
4
44
I OH Output
0/ 5 2.5
Drive
Current
HCC 0/ 5
Types 0/10
4.6
9.5
5 –2
5 – 0.64
10 – 1.6
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 1.15
– 0.36
– 0.9
0/15 13.5
0/ 5 2.5
15 – 4.2
5 – 1.53
– 3.4 – 6.8
– 1.36 – 3.2
– 2.4
– 1.1
mA
HCF 0/ 5
Types 0/10
4.6
9.5
5 – 0.52
10 – 1.3
– 0.44 – 1
– 1.1 – 2.6
– 0.36
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
I OL Output
0/ 5 0.4
Sink
Current
HCC
Types
0/10
0.5
0/15 1.5
0/ 5
HCF
Types
0/10
0/15
0.4
0.5
1.5
5 0.64
10 1.6
15 4.2
5 0.52
10 1.3
15 3.6
0.51
1.3
3.4
0.44
1.1
3.0
1
2.6
6.8
1
2.6
6.8
0.36
0.9
2.4
0.36
0.9
2.4
mA
I IH, IIL
Input
Leakage
Current
HCC
Types
0/18
HCF
Types 0/15
Any Input
18
15
± 0.1
± 0.3
±10– 5 ± 0.1
±10– 5 ± 0.3
±1
µA
±1
CI Input Capacitance
Any Input
5 7.5
pF
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, typical temperature
coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns, RL = 200k)
Symbol
Parameter
tPHL , t PL H Propagation Delay Time
Test Conditions
V al ue
V D D (V) Min. Typ. Max.
5 125 250
10 60 125
Unit
ns
15 45 90
t T L H, t THL Transition Time
5 100 200
10
50 100
ns
15 40 80
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HCC/HCF4073B/4081B/4082B
Typical Voltage and Current Transfer Charac-
teristics.
Typical Output Low (sink) Current .
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
Typical Propagation Delay Time vs. Load Capacit-
ance.
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Typical Transition Time vs. Load Capacitance.
HCC/HCF4073B/4081B/4082B
Typical Dynamic Power Dissipation per Gate vs.
Frequency.
TEST CIRCUITS
Quiescent Device Current.
Input Voltage.
Input Leakage Current.
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