K1165.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 K1165 데이타시트 다운로드

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2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
REJ03G0914-0200
(Previous: ADE-208-1252)
Rev.2.00
Sep 07, 2005
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6

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2SK1165, 2SK1166
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1165
2SK1166
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol
Drain to source
breakdown voltage
2SK1165
2SK1166
V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate voltage drain 2SK1165
current
2SK1166
IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on 2SK1165
state resistance
2SK1166
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery
time
trr
Note: 3. Pulse test
Min
450
500
±30
2.0
6.0
Typ
0.40
0.45
10
1450
410
55
20
70
120
60
1.0
450
Ratings
450
500
±30
12
48
12
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.55
0.60
Unit
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 6 A, VGS = 10 V *3
S ID = 6 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 6 A, VGS = 10 V,
ns RL = 5
ns
ns
V IF = 12 A, VGS = 0
ns IF = 12 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6

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2SK1165, 2SK1166
Main Characteristics
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
8V
6V
16
5.5 V
12 5.0 V
8
4.5 V
4
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8 15 A
6
10 A
4
ID = 5 A
2
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1.0
0.3
0.1
1
DC OPpWer=at1io0nm(1TsCm(1=s1s20h50o°µ1Ct)0s) µs
Ta = 25°C
2SK1166
2SK1165
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
16
VDS = 20 V
Pulse Test
12
8
75°C
4
–25°C
TC = 25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1.0
0.5 15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
Drain Current ID (A)
50

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2SK1165, 2SK1166
Static Drain to Source on State
Resistance vs. Temperature
1.0
VGS = 10 V
Pulse Test
0.8
15 A
10 A
ID = 5 A
0.6
0.4
0.2
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0 V
Pulse Test
1,000
500
200
100
50
0.2 0.5 1.0 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
VDD = 100 V
250 V
400 VDS 400 V
VGS
300
20
16
12
200 8
ID = 12 A
100 VDD = 400 V
250 V
100 V
4
0
0 20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
10
–25°C
TC = 25°C
75°C
5
2
1.0
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
10,000
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
200
td (off)
100 tr
50 tf
20 td (on)
10
5
0.5 1.0 2
5 10 20
Drain Current ID (A)
50
Rev.2.00 Sep 07, 2005 page 4 of 6

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2SK1165, 2SK1166
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
4 5, 10 V
VGS = 0, –10 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1 Shot Pulse
0.01
10 µ 100 µ
1m
10 m
θch–c (t) = γ S (t) • θch–c
θch–c = 1.25°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
RL
50
Vin = 10 V
VDD .=. 30 V
Waveforms
90 %
Vin 10 %
Vout 10 %
10 %
td (on)
90 %
90 %
tr td (off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6