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ATF-58143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF-58143 is a high dynamic
range, low noise E-PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-58143 ideal as low noise ampli-
fier for cellular/PCS/WCDMA base stations, wireless lo-
cal loop, and other applications that require low noise
and high linearity performance in the 450 MHz to 6 GHz
frequency range.
Surface Mount Package SOT-343
Pin Connections and Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note:
Top View. Package marking provides orientation and identification
“8F” = Device Code
“x” = Date code character
identifies month of manufacture.
Features
Low noise and high linearity performance
Enhancement Mode Technology[1]
Excellent uniformity in product specifications
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70) in Tape-and-Reel packaging option
available
Lead-free option available
Specifications
2 GHz; 3V, 30 mA (Typ.)
30.5 dBm output 3rd order intercept
19 dBm output power at 1 dB
0.5 dB noise figure
16.5 dB associated gain
Applications
Q1 LNA for cellular/PCS/WCDMA base stations
Q1, Q2 LNA and Pre-driver amplifier for 3–4 GHz WLL
Other low noise and high linearity applications at 450
MHz to 6 GHz
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge Damage and Control.

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ATF-58143 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
AbsoluteMaximum
V
DS
V
GS
V
GD
I
DS
P
diss
P
inmax.
Drain-SourceVoltage[2]
Gate-SourceVoltage[2]
GateDrainVoltage[2]
DrainCurrent[2]
TotalPowerDissipation[3]
RF InputPower
(Vds=3V , Ids =30mA)
(Vds=0V, Ids=0mA)
(Vds=4V, Ids=30mA)
V
V
V
mA
mW
dBm
dBm
dBm
5
-5to1
-5to1
100
500
+20
+20
+20
IGS
GateSourceCurrent
mA
T
ChannelTemperature
°C
CH
T
StorageTemperature
°C
STG
θ
ThermalResistance[4]
°C/W
jc
2[5]
150
-65to150
162
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for T > 33°C.
L
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
5. The device can handle +13 dBm RF Input Power provided I is limited
GS
to 2 mA. I at P drive level is bias circuit dependent. See applications
GS 1dB
section for additional information.
120 0.7V
100
0.6V
80
60
0.5V
40
20 0.4V
0.3V
0
01 2 3 4 5 67
VDS (V)
Figure 1. Typical I-V Curves (VGS=0.1V per step)
Product Consistency Distribution Charts [6,7]
-150
Cpk=2.735
Stdev=0.049
-125
Cpk=1.953
Stdev=0.2610
Cpk=1.036
Stdev=0.509
-100
-75
-50
-25
0
0.3 0.4 0.5 0.6
NF (dB)
Figure 2. NF @ 3V, 30 mA.
USL = 0.9, Nominal = 0.5
0.7
0.8
15
16 17
18
GAIN (dB)
Figure 3. Gain @ 3V, 30 mA.
USL = 18.5, LSL = 15, Nominal = 16.5
28 29 30 31 32 33
OIP3 (dBm)
Figure 4. OIP3 @ 3V, 30 mA.
LSL = 29, Nominal = 30.5
34
Notes:
6. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based
on production test equipment. Circuit losses have been de-embedded from actual measurements.
2

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ATF-58143 Electrical Specifications
T = 25°C, RF parameters measured in a test circuit for a typical device
A
Symbol
Parameter and Test Condition
Vgs Operational Gate Voltage
Vds = 3V, Ids = 30 mA
Vth Threshold Voltage
Vds = 3V, Ids = 4 mA
Idss Saturated Drain Current
Vds = 3V, Vgs = 0V
Gm Transconductance
Vds = 3V,
gm = Idss/Vgs;
Vgs = 0.75 – 0.7 = 0.05V
Igss Gate Leakage Current
Vgd = Vgs = -3V
NF
Noise Figure [1]
f = 2 GHz Vds = 3V, Ids = 30 mA
f = 900 MHz Vds = 3V, Ids = 30 mA
f = 2 GHz Vds = 4V, Ids = 30 mA
f = 900 MHz Vds = 4V, Ids = 30 mA
Ga
Associated Gain[1]
f = 2 GHz Vds = 3V, Ids = 30 mA
f = 900 MHz Vds = 3V, Ids = 30 mA
f = 2 GHz Vds = 4V, Ids = 30 mA
f = 900 MHz Vds = 4V, Ids = 30 mA
OIP3
Output 3rd Order
Intercept Point[1]
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
P1dB
1dB Compressed
f = 2 GHz Vds = 3V, Ids = 30 mA
Output Power[1]
f = 900 MHz Vds = 3V, Ids = 30 mA
f = 2 GHz Vds = 4V, Ids = 30 mA
f = 900 MHz Vds = 4V, Ids = 30 mA
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
Units
V
V
μA
mmho
μA
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Min.
0.4
0.18
230
15
29
Typ.[2]
0.51
0.38
1
410
Max.
0.75
0.52
5
560
— 200
0.5 0.9
0.3 —
0.5 —
0.3 —
16.5 18.5
23.1 —
17.7 —
22.5 —
30.5 —
28.6 —
31.5 —
31.0 —
19 —
18 —
21 —
19 —
28.2 + j9.4
51 – j3.3
RFin
input
matching
0.6 dB loss
output
matching
0.7 dB loss
RFout
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.
3

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C2 L1 C5
J2
C4
S
ATF-58143
S
J1
G
C1
AVAGO
TECHNOLOGIES
C3
C1 : 2.7 pF Cap (0603)
C2 : 1 pF Cap (0603)
C3 : 1200 pF Cap (0603)
C4 : 120 pF Cap (0402)
C5 : 1200 pF Cap (0603)
R1 : 49.9 Ohm (0603)
L1 : 56 nH (0603)
J1 : 0 Ohm, Jumper (0805)
J2 : 0 Ohm, Jumper (0805)
J3 : 0 Ohm, Jumper (0402)
J4 : 0 Ohm, Jumper (0402)
R1
Figure 6. Close-up of Production Test Board.
ATF-58143 Typical Performance Curves
0.7
0.6
0.5
0.4
0.3
3V
4V
0.2
0 10 20 30 40 50 60 70
Ids (mA)
Figure 7. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 3V
4V
0
0 10 20 30 40 50 60 70
Ids (mA)
Figure 8. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
25
24
23
22
21
20
19 3V
4V
18
0 10 20 30 40 50 60 70
Ids (mA)
Figure 10. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
42
37
32
27
22
17 3V
4V
12
0 10 20 30 40 50 60 70
Ids (mA)
Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
19
18
17
16
15
14
13 3V
4V
12
0 10 20 30 40 50 60 70
Ids (mA)
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
40
35
30
25
20
3V
4V
15
0 10 20 30 40 50 60 70
Ids (mA)
Figure 12. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
4

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ATF-58143 Typical Performance Curves, continued
24
22
20
18
16
14 3V
4V
12
0 10 20 30 40 50 60 70
Idq (mA)
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.[1]
30
25
20
15
10 25°C
-40°C
85°C
5
0 1 2 3 4 56
FREQUENCY (GHz)
Figure 16. Gain vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
23
22
21
20
19
18
17
16
3V
4V
15
0 10 20 30 40 50 60 70
Idq (mA)
Figure 14. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.[1]
35
30
25
20
15 25°C
-40°C
85°C
10
0 1 2 3 4 56
FREQUENCY (GHz)
Figure 17. OIP3 vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
Note:
1. When plotting P1dB, the drain current was
allowed to vary dependent on the RF input power.
1.5
1.0
0.5
25°C
-40°C
85°C
0
0 1 2 3 4 56
FREQUENCY (GHz)
Figure 15. Fmin vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
0
1234
FREQUENCY (GHz)
25°C
-40°C
85°C
56
Figure 18. P1dB vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
5