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MGA-31689
0.5 W High Gain Driver Amplifier
Data Sheet
Description
Avago Technologies’ MGA-31689 is a 0.5 W, high Gain,
high performance Driver Amplifier MMIC, housed in a
standard SOT-89 plastic package. The device required
simple matching components to achieve optimum per-
formance within specific 100 to 200 MHz bandwidth.
MGA-31689 is especially ideal for wireless infrastructure
applications that operate within the 1.5 GHz to 3 GHz
frequency range. With high IP3 and low noise figure, the
MGA-31689 may be utilized as a driver amplifier in the
transmit chain and as second or third stage LNA in the re-
ceive chain. For optimum performance at lower frequency
from 450 MHz to 1500 MHz, MGA-31589 is recommended.
MGA-31689’s high gain and high linearity features are
achieved through the use of Avago Technologies’ propri-
etary 0.25 Pm GaAs Enhancement-mode pHEMT process.
Pin connections and Package Marking
GND GND
16X
Features
x ROHS compliant
x Halogen free
x High linearity at low DC bias power [1]
x High Gain
x Low noise figure
x High OIP3
x Advanced enhancement mode PHEMT Technology
x Excellent uniformity in product specification
x SOT-89 standard package
Specifications
At 1900 MHz, Vdd = 5 V, Idd = 168 mA (typical) at 25° C
x OIP3 = 44.9 dBm
x Noise Figure = 1.9 dB
x Gain = 18.1 dB
x P1dB = 27.6 dBm
x IRL = 14.0 dB, ORL = 11.5 dB
Note:
1. The MGA-31689 has a superior LFOM of 15.5. Linearity Figure of Merit
(LFOM) is essentially OIP3 divided by DC bias power.
Input GND Output
Top View
Output GND Input
Bottom View
Note:
Top View: Package marking provides orientation and identification
“16” = Device Code
“X” = Date Code character indentifies month of manufacturing
VDD
C
C
C
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 150 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RF IN C
MGA-31689
L
C
LC
C
Figure 1. Simplified Schematic diagram
RF OUT
L

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MGA-31689 Absolute Maximum Rating [1]
Symbol
Vdd, max
Pd
Pin
Tj
TSTG
Parameter
Drain Voltage, RF output to ground
Power Dissipation (2)
CW RF Input Power
Junction Temperature
Storage Temperature
Units
V
mW
dBm
°C
°C
Absolute Max.
5.5
1050
15
150
-65 to 150
Thermal Resistance
Thermal Resistance [3]
(Vdd = 5.0 V, Idd = 168 mA, Tc = 85° C),
Tjc = 44° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Source lead temperature is 25° C. Derate 22.7
mW/° C for TL>103.8° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
MGA-31689 Electrical Specification [1]
TC = 25° C, Zo = 50 :, Vdd = 5 V, unless specified.
Frequency
Symbol
Parameter and Test Condition
(MHz)
Units Min. Typ. Max.
Ids Quiescent Current
NF Noise Figure
NA
1900
2600
mA 150 168 195
dB 1.9 2.8
2.2
Gain Gain
1900
2600
dB 16.6 18.1 19.6
16.7
OIP3
Output Third Order Intercept Point
1900 [2]
2600 [3]
dBm 41
44.9
44.8
P1dB
Output Power at 1 dB Gain Compression
1900
2600
dBm 26.5
27.6
26.8
PAE Power Added Efficiency at P1dB
1900
2600
%
48.0
42.6
IRL Input Return Loss
1900
2600
dB
14.0
13.2
ORL Output Return Loss
1900
2600
dB
11.5
10.5
ISOL Isolation
1900
2600
dB
27.3
27.6
Note :
1. Measurements obtained from a test circuit described in Figure 27.
2. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -6 dBm per tone measured at worst case side band.
3. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -5 dBm per tone measured at worst case side band.
2

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MGA-31689 Consistency Distribution Charts [1,2]
LSL USL
LSL
150 160 170 180 190
Figure 2. Idd at Vdd = 5 V, LSL = 150 mA , Nominal = 168 mA, USL = 195 mA
27 28 29
Figure 3. OP1dB at 1900 MHz, Vdd = 5 V, LSL = 26.3 dBm, Nominal = 27.6
dBm
LSL USL
USL
16 17 18 19 20
Figure 4. Gain at 1900 MHz, Vdd = 5 V, LSL = 16.6 dB, Nominal = 18.1 dB,
USL = 19.6 dB
1 23
Figure 5. NF at 1900 MHz, Vdd = 5 V, Nominal = 1.9 dB, USL = 2.8 dB
LSL
40 41 42 43 44 45 46 47 48 49 50
Figure 6. OIP3 at 1900 MHz, Vdd = 5 V, LSL = 41.0 dBm, Nominal = 44.9 dBm
Notes:
1. Data sample size is 2700 samples taken from 5 wafers and 3 different
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents
a trade off between nominal Gain, NF, OIP3, and OP1dB. Circuit losses
have been de-embedded from actual measurements.
3

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MGA-31689 Application Circuit Data for 1900 MHz
TA = 25° C, Vdd = 5.0 V, Idd = 168 mA
50
45
40
35
30
1700
1800 1900
Frequency (MHz)
Figure 7. Over Temperature OIP3 vs Frequency
25° C
8C
-40° C
2000
30
29
28
27
26
25
1700
1800 1900
Frequency (MHz)
Figure 8. Over Temperature OP1dB vs Frequency
25° C
8C
-40° C
2000
18.8
18.6
18.4
18.2
18.0
17.8
1700
1800 1900
Frequency (MHz)
Figure 9. Over Temperature Gain vs Frequency
25° C
8C
-40° C
2000
-6
-8
-10
-12
-14
-16
-18
-20
1700
1800 1900
Frequency (MHz)
Figure 10. Over Temperature IRL vs Frequency
25° C
8C
-40° C
2000
-6
-8
-10
-12
-14
-16
-18
-20
1700
1800 1900
Frequency (MHz)
Figure 11. Over Temperature ORL vs Frequency
25° C
8C
-40° C
2000
-25
-26
-27
-28
-29
-30
1700
1800 1900
Frequency (MHz)
Figure 12. Over Temperature Isolation vs Frequency
25° C
8C
-40° C
2000
4

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MGA-31689 Application Circuit Data for 1900 MHz (continued)
3.5 50
25° C
3.0
8C
-40° C 45
2.5
40
2.0
1.5
1.0
1700
1800 1900
Frequency (MHz)
Figure 13. Over Temperature Noise Figure vs Frequency
35 25° C
8C
-40° C
30
2000 8 9 10 11 12 13 14 15 16 17 18
Pout (dBm)
Figure 14. Over Temperature OIP3 vs Pout at 1900 MHz
-42
-44 W-CDMA 3GPP
-46
-48
Test Model 1+64 DPCH, 3.84 MHz BW
-50
-52
-54
-56
-58
-60
-62
-64
-66 1900 MHz @ 25° C
-68 1900 MHz @ 8C
-70
-72
1900 MHz @ -40° C
-74
10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0
Pout
Figure 15. Over Temperature ACLR vs Pout at 1900 MHz
5
4
3
25 ˚C
2 85˚C
-40 ˚C
1
0
0 5 10
Frequency (GHz)
Figure 16. Over Temperature K-factor vs Frequency
15
20
5