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ST 2SA708
PNP Silicon Epitaxial Planar Transistor
for medium speed switching and low frequency
amplifier applications.
The transistor is subdivided into three groups, R, O
and Y according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Value
80
60
8
700
800
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 2 V, -IC = 50 mA
Current Gain Group R hFE
40
-
80
-
O hFE
70
- 140 -
Y hFE
120
-
240
-
Collector Base Cutoff Current
at -VCB = 60 V
-ICBO
-
- 0.1 µA
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-IEBO
-
- 0.1 µA
-V(BR)CBO
80
-
-
V
-V(BR)CEO
60
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-V(BR)EBO
-VCEsat
8
-
- -V
- 0.7 V
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Current Gain Bandwidth Product
at -VCE = 10 V, -IC = 50 mA
-VBEsat
fT
-
-
- 1.1 V
50 - MHz
Output Capacitance
at -VCB = 10 V, IE = 0, f = 1 MHz
Cob - 13 - pF
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ST 2SA708
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