GT20J101.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 GT20J101 데이타시트 다운로드

No Preview Available !

Preliminary
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT20J101
High Power Switching Applications
GT20J101
Unit: mm
The 3rd Generation
Enhancement-Mode
High Speed: tf = 0.30 µs (max)
Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
600
±20
20
40
130
150
55~150
Unit
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g
2-16C1C
1 2002-01-18

No Preview Available !

GT20J101
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (j-c)
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 2 mA, VCE = 5 V
IC = 20 A, VGE = 15 V
VCE = 20 V, VGE = 0, f = 1 MHz
Inductive Load
VCC = 300 V, IC = 20 A
VGG = ±15 V, RG = 56
(Note1)
5.0
Note1: Switching time measurement circuit and input/output waveforms
Typ. Max Unit
2.1
1450
0.12
0.40
0.15
0.50
±500
1.0
8.0
2.7
0.30
0.96
nA
mA
V
V
pF
µs
°C/W
GT20J301
VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0 VCE
10%
10%
td (off)
tf
toff
10%
90%
10%
td (on)
tr
ton
10%
Note2: Switching loss measurement waveforms
VGE
0
90%
10%
IC
0 VCE
10%
Eoff Eon
2 2002-01-18

No Preview Available !

IC – VCE
50
Common emitter
Tc = 25°C
40
20
15
13
30
12
20
10
VGE = 10 V
0
012345
Collector-emitter voltage VCE (V)
GT20J101
VCE – VGE
20
Common emitter
Tc = −40°C
16
12
8
10 20 40
4
IC = 5 A
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
20
VCE – VGE
20
Common emitter
Tc = 25°C
16
12
8
10 40
20
4 IC = 5 A
0
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
20
Common emitter
Tc = 125°C
16
VCE – VGE
12
8
40
20
10
4
IC = 5 A
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
20
50
Common emitter
VCE = 5 V
40
IC – VGE
30
20
25
10
Tc = 125°C
40
0
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
4
Common emitter
VGE = 15 V
3
VCE (sat) – Tc
2
1
40
30
20
10
IC = 5 A
0
60 20
20
60 100 140
Case temperature Tc (°C)
3 2002-01-18

No Preview Available !

Switching time ton, tr – RG
3 Common emitter
VCC = 300 V
VGG = ±15 V
ton
1
IC = 20 A
: Tc = 25°C
: Tc = 125°C
0.5
0.3 tr
0.1
0.05
0.03
3
10 30
100 300
Gate resistance RG ()
1000
GT20J101
Switching time ton, tr – IC
3
Common emitter
VCC = 300 V
VGG = ±15 V
1 RG = 56
: Tc = 25°C
0.5 : Tc = 125°C
0.3
ton
0.1
0.05
0.03
tr
0.01
0
4
8 12
16
Collector current IC (A)
20
Switching time toff, tf – RG
3
Common emitter
VCC = 300 V
VGG = ±15 V
IC = 20 A
1 : Tc = 25°C
: Tc = 125°C
toff
0.5
0.3 tf
0.1
0.05
0.03
3
10 30 100 300
Gate resistance RG ()
1000
Switching time toff, tf – IC
3
1
toff
0.5
0.3
0.1
0.05
0.03
tf
0.01
0
4
Common emitter
VCC = 300 V
VGG = ±15 V
RG = 56
: Tc = 25°C
: Tc = 125°C
8 12 16 20
Collector current IC (A)
Switching loss Eon, Eoff – RG
10
Common emitter
VCC = 300 V
VGG = ±15 V
3 IC = 20 A
: Tc = 25°C
1 : Tc = 125°C
Note2
Eon
Eoff
0.3
0.1
1
10 100 1000
Gate resistance RG ()
Switching loss Eon, Eoff – IC
10 Common emitter
VCC = 300 V
VGG = ±15 V
3
RG = 56
: Tc = 25°C
: Tc = 125°C
Note2
1
Eon
0.3 Eoff
0.1
0.03
0.01
0
4 8 12 16
Collector current IC (A)
20
4 2002-01-18

No Preview Available !

5000
3000
1000
C – VCE
Cies
300
100
30
Common emitter
10 VGE = 0
f = 1 MHz
5 Tc = 25°C
0.5 1
3
10
Coes
Cres
30 100 300 1000 3000
Collector-emitter voltage VCE (V)
Safe operating area
100
IC max (pulsed)*
50
30
10 ms*
100 µs*
50 µs*
10
IC max
(continuous)
5
3
DC
operation
1 ms*
1
0.5 *:Single nonrepetitive
pulse Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
1 3 10 30
100 300 1000 3000
Collector-emitter voltage VCE (V)
GT20J101
VCE, VGE – QG
500
Common emitter
RL = 15
400 Tc = 25°C
300 300
200 VCE = 100 V 200
20
16
12
8
100 4
00
0 20 40 60 80 100
Gate charge QG (nC)
Reverse bias SOA
100
50
30
10
5
3
1
0.5 Tj <= 125°C
0.3 VGE = ±15 V
RG = 56
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
Rth (t) – tw
102
101
100
101
102
103
104105
104
Tc = 25°C
103 102 101 100 101 102
Pulse width tw (s)
5
2002-01-18