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2SC3203 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into tow group, O
And Y and according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
IE
Ptot
Tj
Tstg
Value
35
30
5
800
-800
600
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 700 mA
Current Gain Group O hFE
100
-
200
-
Y hFE
160
-
320
-
hFE 35
-
-
-
Collector Base Cutoff Current
at VCB = 35 V
ICBO
-
- 0.1 µA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
- 0.1 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
30
-
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 20 mA
VCE(sat)
-
- 0.5 V
Base Emitter Voltage
at IC = 10 mA, VCE = 1 V
VBE 0.5 - 0.8 V
Transition Frequency
at VCE = 5 V, IC = 10 mA
fT - 120 - MHz
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob - 13 - pF
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7/15/2011

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Pc – Ta
800
600
400
200
0 50 100 150 200
Ambient temperature Ta ( C)
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7/15/2011