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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1136
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20C package
·High collector-base breakdown voltage
: VCBO=200V(min)
APPLICATIONS
·For power switching and TV vertical
deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-Peak
PC Collector power dissipation
Open collector
Ta=25
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
200
80
5
4
5
1.8
30
150
-45~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1136
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.4 A
VBEsat
Base-emitter saturation voltage
IC=4 A;IB=0.4 A
ICEO Collector cut-off current
VCE=200V; IB=0
IEBO Collector cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=4A ; VCE=5V
MIN TYP. MAX UNIT
80 V
5V
1.5 V
1.5 V
50
50
20
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1136
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3