2N04H4.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 2N04H4 데이타시트 다운로드

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OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
P- TO262 -3-1
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Product Summary
VDS 40 V
RDS(on)
4 m
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N04S2-H4
SPB80N04S2-H4
SPI80N04S2-H4
Package
Ordering Code
P- TO220 -3-1 Q67060-S6014
P- TO263 -3-2 Q67060-S6013
P- TO262 -3-1 Q67060-S6014
Marking
2N04H4
2N04H4
2N04H4
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
660
25
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-08

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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 0.35 0.5 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=250µA
Zero gate voltage drain current
VDS=40V, VGS=0V, Tj=25°C
VDS=40V, VGS=0V, Tj=125°C2)
V(BR)DSS 40
-
-V
VGS(th) 2.1 3
4
IDSS
µA
- 0.01 1
- 1 100
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=80A
IGSS
- 1 100 nA
RDS(on) - 3.4 4 m
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 200A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2003-05-08

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Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS2*ID *RDS(on)max,
ID =80A
VGS=0V, VDS =25V,
f=1MHz
VDD =20V, VGS =10V,
ID =80A,
RG=1.3
53
-
-
-
-
-
-
-
105 - S
4430 5890 pF
1580 2100
400 600
14 21 ns
36 54
46 69
35 53
Qgs VDD =32V, ID =80A
- 22 29 nC
Qgd - 47 70
Qg
VDD =32V, ID =80A,
- 111 148
VGS=0 to 10V
V(plateau) VDD = 32 V , ID=80A - 5.2 - V
IS
ISM
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=80A
VR =20V, IF=lS,
diF/dt=100A/µs
- - 80 A
- - 320
- 0.9 1.3 V
- 195 240 ns
- 370 460 nC
Page 3
2003-05-08

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1 Power dissipation
Ptot = f (TC)
parameter: VGS6 V
SPP80N04S2-H4
320
W
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160 °C 190
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 3 SPP80N04S2-H4
A tp = 29.0µs
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
2 Drain current
ID = f (TC)
parameter: VGS10 V
90 SPP80N04S2-H4
A
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 °C 190
TC
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP80N04S2-H4
K/W
10 0
10 2
100 µs
10 -1
10 1
10 0
10 -1
10 0
1 ms 10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 1 V 10 2
VDS
10 -5
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
s 10 0
tp
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2003-05-08

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5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N04S2-H4
Ptot = 300W
A
hgf
160
140
120
100
80
VGS [V]
ea
4.0
b 4.5
c 5.0
d 5.5
e 6.0
f 6.5
g 7.0
d
h 10.0
60
40 c
20
b
0a
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
13 SPP80N04S2-H4
d
e
11
10
9
8
7
6
5f
4g
h
3
2
VGS [V] =
1
de f
5.5 6.0 6.5
0
0 20 40
gh
7.0 10.0
60 80
100 120 140
A 180
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
140
S
120
100
100
80
80
60
60
40
40
20 20
0
0 1 2 3 4V 6
VGS
Page 5
0
0 20 40 60 80 100 120 A 160
ID
2003-05-08