K10A60W.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 K10A60W 데이타시트 다운로드

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MOSFETs Silicon N-Channel MOS (DTMOS)
TK10A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TK10A60W
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(t = 1.0 s)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
600
±30
9.7
38.8
30
134
2.5
9.7
38.8
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2012-05
1 2013-12-25
Rev.3.0

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5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 37.6 mH, RG = 25 , IAR = 2.5 A
TK10A60W
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
4.17 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-12-25
Rev.3.0

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TK10A60W
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 0.5 mA
VGS = 10 V, ID = 4.9 A
Min
600
2.7
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Typ.
0.327
Max
±1
10
3.7
0.38
Unit
µA
V
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
Ciss
Crss
Coss
Co(er)
rg
tr
ton
tf
toff
dv/dt
Test Condition
VDS = 300 V, VGS = 0 V, f = 1 MHz
VDS = 0 to 400 V, VGS = 0 V
VDS = OPEN, f = 1 MHz
See Figure 6.2.1
VDD = 0 to 400 V, ID = 4.9 A
Min Typ. Max Unit
700
pF
2.3
20
35
7.5
22 ns
45
5.5
75
50   V/ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Qg VDD 400 V, VGS = 10 V, ID = 9.7 A 20 nC
Qgs1
Qgd
4.5
9.5
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
Test Condition
Min Typ. Max Unit
VDSF IDR = 9.7 A, VGS = 0 V
  -1.7 V
trr IDR = 4.9 A, VGS = 0 V
Qrr -dIDR/dt = 100 A/µs
250
ns
2.2 µC
Irr
19
A
dv/dt IDR = 4.9 A, VGS = 0 V, VDD = 400 V
15
V/ns
3 2013-12-25
Rev.3.0

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7. Marking (Note)
TK10A60W
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
4 2013-12-25
Rev.3.0

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8. Characteristics Curves (Note)
TK10A60W
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.6 RDS(ON) - ID
5 2013-12-25
Rev.3.0