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Preliminary
TK10A60W
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK10A60W
Switching Regulator Applications
Low drain-source on-resistance : RDS (ON) = 0.327
by used to Super Junction Structure : DTMOS
(typ.)
Easy to control Gate switching
Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
1.14 ± 0.15
Characteristics
Symbol
Drain-source voltage
Gate-source voltage
VDSS
VGSS
Drain current (Continuous) (Note 1)
ID
Drain current (Pulsed)
(Note 1)
Drain power dissipation (Tc = 25°C)
IDP
PD
Single pulse avalanche energy
(Note 2)
EAS
Avalanche current
Drain reverse current (Continuous)
(Note 1)
IAR
IDR
Drain reverse current (Pulsed) (Note 1) IDRP
Channel temperature
Tch
Storage temperature range
Tstg
Isolation voltage (t = 1.0s)
Mounting torque
VISO(RMS)
TOR
Rating
600
±30
9.7
38.8
30
69
4.9
9.7
38.8
150
-55 to 150
2000
0.6
Unit
V
V
A
A
W
mJ
A
A
A
°C
°C
V
Nm
0.69 ± 0.15
0.2 M A
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.17 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.0 mH, RG = 25 , IAR = 4.9 A
This transistor is an electrostatic-sensitive device. Handle with care.
Internal Connection
2
1
3
1 2012-03-26

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Preliminary
Electrical Characteristics (Ta = 25°C)
TK10A60W
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge1
Gate-drain charge
MOSFET turn-off dv/dt
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Ciss
Crss
Coss
Co(er)
Rg
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 0.5 mA
VGS = 10 V, ID = 4.9 A
VDS = 300 V, VGS = 0 V, f = 1MHz
VDS = 0 to 400 V, VGS = 0 V
VDS = OPEN, f = 1MHz
tr
10 V
VGS
0V
ID = 4.9 A VOUT
ton 10 RL= 82
tf
toff
Qg
Qgs1
Qgd
dv/dt
VDD 400 V
Duty 1%, tw = 10 µs
VDD 400 V, VGS = 10 V, ID = 9.7 A
VDD = 0 to 400 V, ID = 4.9 A
Min Typ. Max
⎯ ⎯ ±1
⎯ ⎯ 100
600
2.7 3.7
0.327 0.38
720
2.3
20
35
8.5
Unit
µA
µA
V
V
pF
pF
22
45
Ns
6.5
80
20
4.5 nC
9.5
50 ⎯ ⎯ V/ns
Source-Drain Characteristics (Ta = 25°C)
Characteristics
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Reverse recovery peak current
Reverse Diode dv/dt
Symbol
VDSF
trr
Qrr
Irr
dv/dt
Test Condition
IDR = 9.7 A, VGS = 0 V
IDR = 9.7 A, VGS = 0 V,
-dIDR/dt = 100 A/µs
IDR = 9.7 A, VGS = 0 V,
VDD = 400 V
Min Typ. Max Unit
⎯ ⎯ −1.7 V
280
ns
3 ⎯ µC
23
A
15 ⎯ ⎯ V/ns
Marking
K10A60W
Note : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
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Preliminary
TK10A60W
9
Common source
8 Ta = 25°C
Pulse test
7
6
ID – VDS
10
7
7.5
8
9
6.5
5
6
4
3
5.5
2
1 VGS = 5 V
0
012345
Drain-source voltage VDS (V)
18
Common source
16 Ta = 25°C
Pulse test
14
12
ID – VDS
10 9
8
7.5
10 7
8
6.5
6
6
3
2 5.5
VGS = 5 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
18
Common source
16 VDS = 10 V
Ta = 25°C
14 Pulse test
ID – VGS
12
10
8
6
3
2
0
0 246 8
Gate-source voltage VGS (V)
10
VDS – VGS
10
Common source
Ta = 25°C
Pulse test
8
6
4 ID = 9.7 A
2 4.9
2.5
0
0 4 8 12 16 20
Gate-source voltage VGS (V)
700
Common source
VGS = 0 V
660 ID = 10 mA
Pulse test
VDSS – Ta
620
580
540
500
100
50 0
50 100 150
Ambient temperature Ta (°C)
200
RDS(ON) – ID
10
1
0.1
Common source
VGS = 10 V
Ta = 25°C
Pulse test
0.01
0.1
1
10
Drain current ID (A)
100
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