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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
WHITE PACKAGE (-M SUFFIX)
6
6
1
6
1
1
BLACK PACKAGE (NO -M SUFFIX)
4N28
H11A3
4N35
H11A4
4N36
H11A5
SCHEMATIC
16
25
3 NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
16
1
6
1
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.
FEATURES
• Also available in white package by specifying -M suffix, eg. 4N25-M
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
- Add option V for white package (e.g., 4N25V-M)
- Add option 300 for black package (e.g., 4N25.300)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 15
5/7/03

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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
4N36
H11A5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specied)
Parameter
Symbol
Value
TOTAL DEVICE
Storage Temperature
Operating Temperature
Wave solder temperature (see page 14 for reow solder proles)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
VCEO
VCBO
VECO
PD
-55 to +150
-55 to +100
260 for 10 sec
250
3.3 (non-M), 2.94 (-M)
100 (non-M), 60 (-M)
6
3
150 (non-M), 120 (-M)
2.0 (non-M), 1.41 (-M)
30
70
7
150
2.0 (non-M), 1.76 (-M)
Units
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
© 2003 Fairchild Semiconductor Corporation
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5/7/03

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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
4N36
H11A5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specied)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
Test Conditions
(IF = 10 mA)
(VR = 6.0 V)
(IC = 1.0 mA, IF = 0)
(IC = 100 µA, IF = 0)
(IE = 100 µA, IF = 0)
(VCE = 10 V, IF = 0)
(VCB = 10 V)
(VCE = 0 V, f = 1 MHz)
Symbol
VF
IR
BVCEO
BVCBO
BVECO
ICEO
ICBO
CCE
Min Typ* Max Unit
1.18
0.001
1.50
10
V
µA
30 100
V
70 120
V
7 10
V
1 50 nA
20 nA
8 pF
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions Symbol Min
(Non -M, Black Package) (f = 60 Hz, t = 1 min)
(-M, White Package) (f = 60 Hz, t = 1 sec)
(VI-O = 500 VDC)
(VI-O = &, f = 1 MHz)
(-MWhite Package)
VISO
RISO
CISO
5300
7500
1011
Typ*
0.5
0.2
Max
2
Units
Vac(rms)
Vac(pk)
pF
pF
Note
* Typical values at TA = 25°C
© 2003 Fairchild Semiconductor Corporation
Page 3 of 15
5/7/03