H11AA2.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 H11AA2 데이타시트 다운로드

No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by H11AA1/D
GlobalOptoisolator
6-Pin DIP Optoisolators
AC Input/Transistor Output
The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–
arsenide infrared emitting diodes connected in inverse parallel, optically
coupled to a monolithic silicon phototransistor detector.
Built–In Protection for Reverse Polarity
Guaranteed CTR Minimum Values as High as 100%
Guaranteed Minimum/Maximum Symmetry Limits
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
Detecting or Monitoring ac Signals
AC Line/Digital Logic Isolation
Programmable Controllers
Interfacing and coupling systems of different potentials and impedances
AC/DC — Input Modules
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Forward Current — Continuous (RMS)
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
IF 60 mA
PD 120 mW
1.41 mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LEDs
Derate above 25°C
VCEO
VEBO
VCBO
IC
PD
30 Volts
5 Volts
70 Volts
150 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD 250 mW
2.94 mW/°C
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
TA – 55 to +100
Tstg – 55 to +150
°C
°C
Soldering Temperature (10 sec, 1/16from case)
TL 260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
©MMoottoorroolal,aInOc.p1t9o9e5lectronics Device Data
H11AA1*
[CTR = 20% Min]
H11AA2
[CTR = 10% Min]
H11AA3
[CTR = 50% Min]
H11AA4*
[CTR = 100% Min]
*Motorola Preferred Devices
STYLE 8 PLASTIC
61
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
1
2
3 NC
6
5
4
PIN 1. INPUT LED
2. INPUT LED
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
1

No Preview Available !

H11AA1 H11AA2 H11AA3 H11AA4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min Typ(1) Max
INPUT LED
Forward Voltage
(IF = 10 mA, either direction)
Capacitance (V = 0 V, f = 1 MHz)
TA = –55°C
TA = 100°C
H11AA1,3,4
H11AA2
All devices
All devices
VF
CJ
— 1.15 1.5
— 1.15 1.8
— 1.3 —
— 1.05 —
— 20 —
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(VCE = 10 V)
TA = 100°C
H11AA1,3,4
H11AA2
All devices
ICEO
1 100
1 200
1—
Collector–Base Dark Current (VCB = 10 V)
ICBO
— 0.2
Collector–Emitter Breakdown Voltage (IC = 10 mA)
Collector–Base Breakdown Voltage (IC = 100 µA)
Emitter–Collector Breakdown Voltage (IE = 100 µA)
V(BR)CEO
30
45
V(BR)CBO
70
100
V(BR)ECO
5
7.8
DC Current Gain (IC = 2 mA, VCE = 5 V) (Typical Value)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)
hFE
CCE
— 500 —
— 1.7 —
Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)
Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)
CCB
CEB
— 20 —
— 10 —
COUPLED
"Output Collector Current
(IF = 10 mA, VCE = 10 V)
H11AA1
H11AA2
H11AA3
H11AA4
Output Collector Current Symmetry(3)
+ ) +IC at IF
ǒ + + ǓIC at IF
10 mA, VCE
–10 mA, VCE
H11AA1,3,4
10 V
10 V
IC (CTR)(2)
2 (20)
1 (10)
5 (50)
10 (100)
0.33
5 (50)
2 (20)
10 (100)
15 (150)
3
"Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
VCE(sat)
0.1 0.4
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
VISO
7500
Isolation Resistance (V = 500 V)(4)
RISO
1011
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
CISO
— 0.2
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. This specification guarantees that the higher of the two IC readings will be no more than 3 times the lower at IF = 10 mA.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Unit
Volts
pF
nA
nA
µA
nA
Volts
Volts
Volts
pF
pF
pF
mA (%)
Volts
Vac(pk)
pF
2 Motorola Optoelectronics Device Data

No Preview Available !

H11AA1 H11AA2 H11AA3 H11AA4
TYPICAL CHARACTERISTICS
2.4 PULSE ONLY
PULSE OR DC
1.6
0.8
0
–0.8
–1.6
–2.4
–1000
–600 –200 0 200
600
iF, INSTANANEOUS INPUT CURRENT (mA)
1000
Figure 1. Input Voltage versus Input Current
INPUT CURRENT
WAVEFORM
MAXIMUM
PEAK OUTPUT
CURRENT (1)
MINIMUM
PEAK OUTPUT
CURRENT (1)
Figure 2. Output Characteristics
28
24 IF = 10 mA
20
16
5 mA
12
8
4 2 mA
0
01
234
567
1 mA
8 9 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Current versus
Collector–Emitter Voltage
10
7
5 NORMALIZED TO TA = 25°C
2
1
0.7
0.5
0.2
0.1
–60 –40 –20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Output Current versus Ambient Temperature
NORMALIZED TO:
VCE = 10 V
100 TA = 25°C
10
VCE = 30 V
1
10 V
0.1
0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Dark Current versus Ambient Temperature
22
20
18
16
14
12
10 CEB
8
6
4
2 CCE
0
0.01
CCB f = 1 MHz
CLED
0.1 1
10
V, VOLTAGE (VOLTS)
Figure 6. Capacitances versus Voltage
100
Motorola Optoelectronics Device Data
3