H11AA4.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 H11AA4 데이타시트 다운로드

No Preview Available !

AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1
H11AA3
H11AA2
DESCRIPTION
The H11AAX series consists of two gallium-arsenide infrared
emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
6
6
FEATURES
• Bi-polar emitter input
• Built-in reverse polarity input protection
• Underwriters Laboratory (UL) recognized File #E90700
• VDE approved File #E94766 (ordering option ‘300’)
6
1
APPLICATIONS
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
1
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation
Derate above 25°C
Symbol
TSTG
TOPR
TSOL
PD
IF
IF(pk)
PD
PD
Device
All
All
All
All
All
All
All
All
H11AA4
SCHEMATIC
1
1 6 BASE
2 5 COLL
3 4 EMITTER
Value
-55 to +150
-55 to +100
260 for 10 sec
350
4.6
100
±1.0
200
2.6
300
4.0
Units
°C
°C
°C
mW
mW/°C
mA
A
mW
mW/°C
mW
mW/°C
2001 Fairchild Semiconductor Corporation
DS300212 12/12/01
1 OF 7
www.fairchildsemi.com

No Preview Available !

H11AA1
H11AA3
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA2
H11AA4
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Capacitance
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
Test Conditions
Symbol
IF = ±10 mA
VF = 0 V, f = 1.0 MHz
VF
CJ
Device
All
All
Min
IC = 1.0 mA, IF = 0
IC = 100 µA, IF = 0
IE = 100 µA, IF = 0
IE = 100 µA, IF = 0
VCE = 10 V, IF = 0
VCE = 0, f = 1 MHz
VCE = 0, f = 1 MHz
VCE = 0, f = 1 MHz
BVCEO
BVCBO
BVEBO
BVECO
ICEO
CCE
CCB
CEB
All
All
All
All
H11AA1,3,4
H11AA2
All
All
All
30
70
5
7
Typ Max Unit
1.2 1.5
80
V
pF
50
200
10
80
15
V
V
V
V
nA
pF
pF
pF
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
Characteristics
Test Conditions
Symbol
Device
Min Typ Max Units
H11AA4
100
Current Transfer Ratio,
Collector to Emitter
IF = ±10 mA, VCE = 10 V
CTRCE
H11AA3
H11AA1
50
20
%
Current Transfer Ratio, Symmetry
Saturation Voltage
Collector to Emitter
IF = ±10 mA, VCE = 10 V (Figure.8)
IF = ±10 mA, ICE = 0.5 mA
VCE(SAT)
H11AA2
All
All
10
.33
3.0 %
.40 V
ISOLATION CHARACTERISTICS
Characteristic
Package Capacitance input/output
Isolation Voltage
Isolation Resistance
Test Conditions Symbol Min
Typ Max Units
VI-O = 0, f = 1 MHz
f = 60 Hz, t = 1 min.
VI-O = 500 VDC
CI-O
VISO
RISO
5300
1011
0.7
pF
V
www.fairchildsemi.com
2 OF 7
12/12/01 DS300212

No Preview Available !

AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1
H11AA3
100
80
60
40
20
0
-20
-40
-60
-80
-100
-2.0
Fig. 1 Input Voltage vs. Input Current
-1.5 -1.0 -0.5 0.0 0.5 1.0
VF - INPUT VOLTAGE (V)
1.5
2.0
Fig. 3 Normalized CTR vs. Ambient Temperature
1.6
1.4 IF = 5 mA
1.2
IF = 10 mA
1.0
0.8
0.6 Normalized to
IF = 10 mA
TA = 25˚C
IF = 20 mA
0.4
-75 -50 -25
0
25 50 75
TA - AMBIENT TEMPERATURE (˚C)
100 125
H11AA2
H11AA4
Fig. 2 Normalized CTR vs. Forward Current
1.4
VCE = 5.0V
TA = 25˚C
1.2
Normalized to
IF = 10 mA
1.0
0.8
0.6
0.4
0.2
0.0
0
5 10 15
IF - FORWARD CURRENT (mA)
20
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
Fig. 4 CTR vs. RBE (Unsaturated)
IF = 20 mA
VCE= 5.0 V
IF = 10 mA
IF = 5 mA
100
RBE- BASE RESISTANCE (kW)
1000
Fig. 5 CTR vs. RBE (Saturated)
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
1.0 100
0.9
VCE= 0.3 V
0.8
IF = 20 mA
10
0.7
0.6
IF = 10 mA
1
0.5
IF = 2.5 mA
0.4
0.1
0.3 IF = 5 mA
0.2
0.1
0.0
10
100
RBE- BASE RESISTANCE (k W)
1000
0.01
TA = 25˚C
0.001
0.01
IF = 5 mA
IF = 10 mA
IF = 20 mA
0.1 1
IC - COLLECTOR CURRENT (mA)
10
DS300212 12/12/01
3 OF 7
www.fairchildsemi.com