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4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
PACKAGE DIMENSIONS
.055 (1.40)
.047 (1.20)
43
.270 (6.86)
.248 (6.30)
.327
(8.30)
MAX
12
.187 (4.75)
.175 (4.45)
.200
(5.10)
MAX
.158 (4.01)
.144 (3.68)
.020 (.51) MIN
.154 (3.90)
.120 (3.05)
.022 (.56)
.015 (.40)
.100 (2.54) TYP
.012 (.30)
.007 (.20)
.300
(7.62)
MIN
.380
(9.64)
MAX
0 to 15°
1 4 COLLECTOR ANODE 1 4 COLLECTOR
2 3 EMITTER CATHODE 2 3 EMITTER
Equivalent Circuit (H11AA814)
Equivalent Circuit (H11A817)
NOTE: ALL DIMENSIONS ARE IN INCHES (mm)
PACKAGE CODE T
DESCRIPTION
The QT Optoelectronics H11AA814 Series consists
of two gallium arsenide infrared emitting diodes, con-
nected in inverse parallel, driving a single silicon
phototransistor in a 4-pin dual in-line package.
The H11A817 Series consists of a gallium arsenide
infrared emitting diode driving a silicon phototransis-
tor in a 4-pin dual in-line package.
FEATURES
s Compact 4-pin package
s Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
APPLICATIONS
H11AA814 Series
s AC line monitor
s Unknown polarity DC sensor
s Telephone line interface
H11A817 Series
s Power supply regulators
s Digital logic inputs
s Microprocessor inputs
s Industrial controls
ABSOLUTE MAXIMUM RATING
TOTAL PACKAGE
Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C
Operating temperature . . . . . . . . . . . . . . . -55° to 100° C
Lead solder temperature . . . . . . . . . . . 260° C for 10 sec
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW
INPUT DIODE
Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW
Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C
Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA
Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A
Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V
OUTPUT TRANSISTOR
Power dissipation (25° C ambient) . . . . .150 mW
Derate linearly (above 25° C) . . . . . .2.0 mW/° C
VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Continuous collector current . . . . . . . . . . 50 mA

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4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
ELECTRO-OPTICAL CHARACTERISTICS (TA = 25° C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS (Applies to all unless indicated otherwise)
PARAMETER
SYMBOL MIN
TYP
MAX UNITS TEST CONDITIONS
INPUT DIODE
Forward voltage
H11A817
H11AA814
Reverse current
VF
VF
1.2 1.5 V
1.2 1.5 V
IF = 20 mA
IF = ±20 mA
H11A817
IR
.001 10 µA VR = 5 V
OUTPUT TRANSISTOR
Breakdown voltage
Collector to emitter
Emitter to collector
Collector dark current
Capacitance
BVCEO
BVECO
ICEO
CCE
35 100
V IC = 1 mA, IF = 0
6 10
V IE = 100 µA, IF = 0
.025 100 nA
VCE = 10 V, IF = 0
8 pF VCE = 0 V, f = 1 MHz
TRANSFER CHARACTERISTICS
CHARACTERISTIC
SYMBOL MIN
DC current transfer ratio
H11AA814
CTR
20
H11AA814A
CTR
50
H11A817
CTR
50
H11A817A
CTR
80
H11A817B
CTR
130
H11A817C
CTR
200
H11A817D
CTR
300
Saturation Voltage
Rise time (non saturated)
VCE (SAT)
tr
Fall time (non saturated)
tf
ISOLATION CHARACTERISTICS
CHARACTERISTIC
SYMBOL MIN
Steady-state isolation voltage VISO
Isolation resistance
RISO
Isolation capacitance
CISO
5300
1011
TYP
0.1
2.4
2.4
TYP
0.5
MAX UNITS TEST CONDITIONS
300 % IF = ±1 mA,VCE = 5V
150 % IF = ±1 mA,VCE = 5V
600 % IF = 5 mA,VCE = 5V
160 %
260 %
400 %
600 %
0.2 V IF = (±)20 mA, IC = 1 mA
18 µs IC = 2 mA, VCE = 2 V,
RL = 100
18 µs IC = 2 mA, VCE = 2 V,
RL = 100
MAX
UNITS
VRMS
pF
TEST CONDITIONS
1 Minute
VI-O = 500 VDC
VI-O = Ø, f = 1 MHz

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4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
TYPICAL CHARACTERISTICS
1.4 1.2
IF = 10 mA
1.2
1
1
IF = 5 mA
0.8
0.8
0.6
0.4
0.6
0.2
0
0 5 10 15 20 25
FORWARD CURRENT – IF (mA)
FIG. 1 - Normalized CTR vs. Forward Current
30
0.4
-50
-25
0 +25 +50 +75
AMBIENT TEMPERATURE (° C)
+100
FIG. 2 - Normalized CTR vs. Ambient Temperature
.14
IF = 20 mA
IC = 1 mA
.12
.1
.08
.06
.04
.02
0
-50 -25 0 25 50 75
AMBIENT TEMPERATURE (° C)
100 125
FIG. 3 - VCE (SAT) vs. Ambient Temperature
1.7
1.5
1.3
T = -55° C
1.1
T = -25° C
0.9
T = 100° C
0.7
0.5
0.1 0.2 0.5
1.0 2.0
5
10 20 50 100
FORWARD CURRENT – IF (mA)
FIG. 4 - Forward Voltage vs. Forward Current