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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
DESCRIPTION
The H11AG series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
FEATURES
• High efficiency low degradation liquid epitaxial IRED
• Logic level compatible, input and output currents, with
CMOS and LS/TTL
• High DC current transfer ratio at low input currents
• Underwriters Laboratory (UL) recognized File #E90700
APPLICATIONS
• CMOS driven solid state reliability
• Telephone ring detector
• Digital logic isolation
6
6
1
1
6
ABSOLUTE MAXIMUM RATINGS
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
Continuous Collector Current
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
PD
Device
All
All
All
All
All
All
All
All
All
All
H11AG3
SCHEMATIC
1
ANODE 1
6 BASE
CATHODE 2
5 COL
N/C 3
4 EMITTER
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
50
6
3.0
75
1.0
150
2.0
50
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mW
mW/°C
mA
2001 Fairchild Semiconductor Corporation
DS300213 1/28/02
1 OF 8
www.fairchildsemi.com

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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
ELECTRICAL CHARACTERISTICS (TA = 0-70°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance
Test Conditions
IF = 1 mA
VR = 5 V, TA = 25°C
VR = 5 V, TA = 70°C
V = 0, f = 1.0 MHz
IC = 1.0 mA, IF = 0
IC = 100 µA, IF = 0
IC = 100 µA, IF = 0
VCE = 10 V, IF = 0
VCE = 10 V, f = 1 MHz
Symbol
VF
IR
IR
CJ
BVCEO
BVCBO
BVECO
ICEO
CCE
Device
All
All
All
All
All
All
All
All
All
Min
30
70
7
Typ Max Units
1.5 V
10 µA
100 µA
100 pF
V
V
V
5 10 µA
2 pF
ISOLATION CHARACTERISTICS
Parameters
Input-Output Isolation Voltage
Test Conditions
II-0 1 µA, t = 1 min.
Symbol Min
Typ Max Units
VISO
5300
Vac(rms)
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions
Symbol
Device
Min Typ Max Units
H11AG1
300
IF = 1 mA, VCE = 5 V
CTR
H11AG2
H11AG3
200
100
Current Transfer Ratio
IF = 1 mA, VCE = 0.6 V
CTR
H11AG1
H11AG2
H11AG3
100
50
20
%
IF = 0.2 mA, VCE = 1.5 V
CTR
H11AG1
H11AG2
100
50
Saturation Voltage
AC Characteristics
Non-Saturated Switching Times
Turn-On Time
Turn-Off Time
IF = 2.0 mA, IC = 0.5 mA
Test Conditions
RL = 100 , IF = 1 mA, VCC = 5 V
RL = 100 , IF = 1 mA, VCC = 5 V
VCE(SAT)
Symbol
ton
toff
All
Device
All
All
.40 V
Min Typ Max Units
5 µS
5 µS
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1/28/02 DS300213

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H11AG1
PHOTOTRANSISTOR OPTOCOUPLERS
H11AG2
H11AG3
Figure 1. LED Forward Voltage vs. Forward Current
2.0
1.8
1.6
1.4 TA = -55 oC
1.2 TA = 25oC
T A = 100 oC
1.0
0.8
0.1
1 10
I F - LED FORWARD CURRENT (mA)
100
Figure 2. Normalized Current Transfer Ratio vs. Forward Current
1.2
1.0
0.8
0.6
0.4
0.2
0.1
NORMALIZED TO:
IF = 5mA
VCE = 5V
TA = 25oC
1 10 100
IF - FORWARD CURRENT - mA
Figure 3. Normalized CTR vs. Temperature
1.6
NORMALIZED TO:
1.4 IF = 5mA
V = 5V
CE
1.2 TA = 25 oC
1.0
IF = 10mA
IF = 2mA
IF = 5mA
0.8
I F = 1mA
0.6
IF = 0.5mA
0.4
0.2 IF = 0.2mA
0.0
-60
-40 -20 0
20 40 60
TA - AMBIENT TEMPERATURE -oC
80 100
Figure 4. Normalized Collector vs. Collector - Emitter Voltage
10
1
0.1
0.01
IF = 10mA
IF = 5mA
IF = 2mA
IF = 1mA
IF = 0.5mA
IF = 0.2mA
0.001
0.0001
0.1
NORMALIZED TO:
IF = 5mA
VCE = 5V
TA = 25 oC
1
VCE - COLLECTOR - EMITTER VOLTAGE - V
10
DS300213 1/28/02
3 OF 8
www.fairchildsemi.com