H11AV2-M.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 H11AV2-M 데이타시트 다운로드

No Preview Available !

PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M
H11AV2-M H11AV2A-M
PACKAGE OUTLINE
6
1
H11AV1S-M, H11AV2S-M
6
1
H11AV1-M, H11AV2-M
6
1
H11AV1A-M, H11AV2A-M
SCHEMATIC
16
25
3 NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.
FEATURES
• H11AV1 and H11AV2 feature 0.3" input-output lead spacing
• H11AV1A and H11AV2A feature 0.4" input-output lead spacing
• UL recognized (File #E90700, Vol. 2)
• VDE recognized (File #102497)
- Add option V (e.g., H11AV1AV-M)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
6/30/03

No Preview Available !

PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M
H11AV2-M H11AV2A-M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
TOTAL DEVICE
Storage Temperature
Operating Temperature
Wave solder temperature (see page 9 for reflow solder profiles)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
TSTG
TOPR
TSOL
PD
IF
VR
PD
VCEO
VCBO
VECO
PD
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
6
120
1.41
70
70
7
150
1.76
Units
°C
°C
°C
mW
mW/°C
mA
V
mW
mW/°C
V
V
V
mW
mW/°C
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
6/30/03

No Preview Available !

PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M
H11AV2-M H11AV2A-M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage (IF = 10 mA)
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
TA = 25°C
TA = -55°C
TA = 100°C
(VR = 6.0 V)
VF
IR
(IC = 1.0 mA, IF = 0)
(IC = 100 µA, IF = 0)
(IE = 100 µA, IF = 0)
(VCE = 10 V, IF = 0)
(VCB = 10 V)
(VCE = 0 V, f = 1 MHz)
BVCEO
BVCBO
BVECO
ICEO
ICBO
CCE
0.8 1.18 1.5
0.9 1.28 1.7
0.7 1.05 1.4
10
70 100
70 120
7 10
1 50
0.5
8
V
µA
V
V
V
nA
nA
pF
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Note
* Typical values at TA = 25°C
Test Conditions Symbol Min
(f = 60 Hz, t = 1 sec)
(VI-O = 500 VDC)
(VI-O = 0 V, f = 1 MHz)
VISO
RISO
CISO
7500
1011
Typ*
0.2
Max
2
Units
Vac(pk)
pF
© 2003 Fairchild Semiconductor Corporation
Page 3 of 10
6/30/03