H11B815.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 H11B815 데이타시트 다운로드

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PACKAGE
4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
SCHEMATIC
44
11
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
4
1
DESCRIPTION
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual
in-line package.
FEATURES
• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at IF = 1 mA)
• High isolation voltage between input and output (5300 VRMS)
• UL recognized (File # E90700)
APPLICATIONS
• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
3/26/03

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4-PIN PHOTODARLINGTON
OPTOCOUPLER
ABSOLUTE MAXIMUM RATINGS (No derating required up to 85°C)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
VCEO
VECO
IC
PD
Value
-55 to +150
-55 to +100
260 for 10 sec
250
80
6
1
140
1.33
35
6
200
200
2.0
H11B815
Units
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
mA
mW
mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
Test Conditions Symbol
Min
(IF = 20 mA)
(VR = 6.0 V)
VF
IR
(IC = 1.0 mA, IF = 0)
(IE = 100 µA, IF = 0)
(VCE = 10 V, IF = 0)
(VCE = 0 V, f = 1 MHz)
BVCEO
BVECO
ICEO
CCE
35
6
Typ**
1.2
0.001
60
8
0.005
8
Max
1.50
10
1
Unit
V
µA
V
V
µA
pF
© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Min Typ** Max Units
Current Transfer Ratio, Collector-Emitter
Saturation Voltage
Rise Time (non saturated)
Fall Time (non saturated)
(IF = 1 mA, VCE = 2 V)
(IF = 20 mA, IC = 5 mA)
(IC = 10 mA, VCE = 2 V, RL = 100V)
(IC = 10 mA, VCE = 2 V, RL = 100V)
CTR
VCE(sat)
tr
tf
600
7,500
0.8 1.0
300
250
%
V
µs
µs
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
Symbol
(II-O [ 1 µA, 1 min.)
(VI-O = 500 VDC)
(VI-O = &, f = 1 MHz)
VISO
RISO
CISO
Min
5300
1011
** All typicals at TA = 25°C
Typ**
0.5
Max Units
Vac(rms)
pf
© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
Typical Performance Curves
Fig. 1 Normalized Current Transfer Ratio
vs. Forward Current
1.4
VCE = 2 V
NORMALIZED TO IF = 1 mA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1
IF - FORWARD CURRENT (mA)
10
Fig. 2 Normalized Current Transfer Ratio
vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
IF = 1 mA, VCE = 2 V
NORMALIZED TO TA = 25˚C
0.0
-55
-25 0
25 50 75
TA - AMBIENT TEMPERATURE (˚C)
100
Fig. 3 Normalized Collector Current
vs. Collector Emitter Voltage
4.0
10 mA
3.5
3.0
5 mA
2.5
2.0
2 mA
1.5
1 mA
1.0
0.5
0.0
0
IF = 0.5 mA
NORMALIZED TO IF =1 mA, VCE = 2 V
12345
VCE - COLLECTOR-EMITTER VOLTAGE (V)
100000
Fig. 4 Collector-Emitter Dark Current
vs. Ambient Temperature
10000 VCE = 10 V
1000
100
10
1
0.1
0
20 40 60 80
TA - AMBIENT TEMPERATURE (˚C)
100
© 2002 Fairchild Semiconductor Corporation
Fig. 5 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
TA = 55˚C
1.3
TA = 25˚C
1.2
TA = 100˚C
1.1
1.0
1
10
IF - LED FORWARD CURRENT (mA)
100
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4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
Recommended Thermal Reflow Profile for Surface Mount DIP Package
Temperature (°C)
250
200
150
100
50
0
0
1
225°C
220°C: 10 sec to 40 sec
Time > 183°C: 120 sec to 180 sec
2 3 4 5 Time (Min)
© 2002 Fairchild Semiconductor Corporation
Page 5 of 9
3/26/03