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PACKAGE
4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
SCHEMATIC
44
11
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
4
1
DESCRIPTION
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual
in-line package.
FEATURES
• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at IF = 1 mA)
• High isolation voltage between input and output (5300 VRMS)
• UL recognized (File # E90700)
APPLICATIONS
• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
3/26/03

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4-PIN PHOTODARLINGTON
OPTOCOUPLER
ABSOLUTE MAXIMUM RATINGS (No derating required up to 85°C)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
VCEO
VECO
IC
PD
Value
-55 to +150
-55 to +100
260 for 10 sec
250
80
6
1
140
1.33
35
6
200
200
2.0
H11B815
Units
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
mA
mW
mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
Test Conditions Symbol
Min
(IF = 20 mA)
(VR = 6.0 V)
VF
IR
(IC = 1.0 mA, IF = 0)
(IE = 100 µA, IF = 0)
(VCE = 10 V, IF = 0)
(VCE = 0 V, f = 1 MHz)
BVCEO
BVECO
ICEO
CCE
35
6
Typ**
1.2
0.001
60
8
0.005
8
Max
1.50
10
1
Unit
V
µA
V
V
µA
pF
© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Min Typ** Max Units
Current Transfer Ratio, Collector-Emitter
Saturation Voltage
Rise Time (non saturated)
Fall Time (non saturated)
(IF = 1 mA, VCE = 2 V)
(IF = 20 mA, IC = 5 mA)
(IC = 10 mA, VCE = 2 V, RL = 100V)
(IC = 10 mA, VCE = 2 V, RL = 100V)
CTR
VCE(sat)
tr
tf
600
7,500
0.8 1.0
300
250
%
V
µs
µs
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
Symbol
(II-O [ 1 µA, 1 min.)
(VI-O = 500 VDC)
(VI-O = &, f = 1 MHz)
VISO
RISO
CISO
Min
5300
1011
** All typicals at TA = 25°C
Typ**
0.5
Max Units
Vac(rms)
pf
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
3/26/03