H11C3.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 H11C3 데이타시트 다운로드

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PHOTO SCR OPTOCOUPLERS
H11C1
H11C2
H11C3
PACKAGE
H11C4
H11C5
H11C6
SCHEMATIC
66
1
1
ANODE 1
CATHODE 2
N/C 3
6 GATE
5 ANODE
4 CATHODE
6
1
DESCRIPTION
The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
rectifier in a dual-in-line package
FEATURES
• High efficiency, low degradation, liquid epitaxial LED
• Underwriters Laboratory (UL) recognized fl File #E90700
• VDE recognized (File #94766) – ordering option .300. (e.g., H11C1.300)
• 200V/400V Peak blocking voltage
• High isolation voltage - 5300V AC (RMS)
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
• 10 A, T2L compatible, solid state relay
• 25 W logic indicator lamp driver
• 200 V symmetrical transistor coupler (H11C1, H11C2, H11C3)
• 400 V symmetrical transistor coupler (H11C4, H11C5, H11C6)
© 2003 Fairchild Semiconductor Corporation
Page 1 of 11
3/19/03

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PHOTO SCR OPTOCOUPLERS
H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate above 25°C
DETECTOR
Power Dissipation (ambient)
Derate linearly above 25°C ambient
Power Dissipation (case)
Derate linearly above 25°C case
Peak Reverse Gate Voltage
RMS On-State Current
Peak On-State Current (100 µS, 1% duty cycle)
Surge Current (10ms)
Peak Forward Voltage
Peak Forward Voltage
Symbol
TSTG
TOPR
TSOL
IF
VR
IF(pk)
PD
PD
PD
VGR
IDM (RMS)
IDM (Peak)
IDM (Surge)
VDM
VDM
Device
Value
All -55 to +150
All -55 to +100
All 260 for 10 sec
All 60
All 6
All 3.0
100
All
1.33
All
All
All
All
All
All
H11C1, H11C2, H11C3
H11C4, H11C5, H11C6
400
5.3
1
13.3
6
300
10
5
200
400
Units
°C
°C
°C
mA
V
A
mW
mW/°C
mW
mW/°C
W
mW/°C
V
mA
A
A
V
V
© 2003 Fairchild Semiconductor Corporation
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3/19/03

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PHOTO SCR OPTOCOUPLERS
H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Device
Min Typ* Max Unit
EMITTER
Input Forward
Voltage
Reverse Leakage
Current
Capacitance
DETECTOR
Off-State Voltage
Reverse Voltage
On-State Voltage
Off-State Current
Reverse Current
IF = 10 mA
VR = 3 V
VF = 0 V, f = 1.0 MHz
RGK = 10k, TA = 100°C, ID = 50µA
RGK = 10k, TA = 100°C, ID = 150µA
RGK = 10k,TA = 100°C, IR = 50µA
RGK = 10k,TA = 100°C, IR = 150µA
ITM = 300 mA
VDM = 200V, TA = 100°C, IF = 0 mA,
RGK = 10k
VDM = 400V, TA = 100°C, IF = 0 mA,
RGK = 10k
VRM = 200 V, TA = 100 °C, IF = 0 mA,
RGK = 10k
VRM = 400 V, TA = 100 °C, IF = 0 mA,
RGK = 10k
VF
IR
CJ
VDM
VRM
VTM
IDM
IRM
All 1.2 1.5 V
All 10 µA
All 50 pF
H11C1, H11C2, H11C3 200
H11C4, H11C5, H11C6 400
H11C1, H11C2, H11C3 200
H11C4, H11C5, H11C6 400
All 1.2 1.3
V
V
V
H11C1, H11C2, H11C3
50 µA
H11C4, H11C5, H11C6
150
H11C1, H11C2, H11C3
H11C4, H11C5, H11C6
50
µA
150
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
Characteristics
Test Conditions
Symbol
Device
Input Current to Trigger
Coupled dv/dt, input to
output (figure 8)
VAK = 50 V, RGK = 10 k
VAK = 100 V, RGK = 27 k
IFT
dv/dt
H11C1,H11C2,
H11C4, H11C5
H11C3, H11C6
H11C1,H11C2,
H11C4, H11C5
H11C3, H11C6
ALL
*Typical values at TA = 25°C
Min Typ* Max Units
20
30 mA
11
14
500 V/µS
© 2003 Fairchild Semiconductor Corporation
Page 3 of 11
3/19/03