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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
6-Pin DIP Optoisolators
High Voltage Transistor Output
(300 Volts)
The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes
optically coupled to high voltage, silicon, phototransistor detectors in a standard
6–pin DIP package. They are designed for high voltage applications and are
particularly useful in copy machines and solid state relays.
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
Copy Machines
Interfacing and coupling systems of different potentials and impedances
Monitor and Detection Circuits
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Forward Current — Continuous
Forward Current — Peak
Pulse Width = 1 µs, 330 pps
IF 60 mA
IF 1.2 Amps
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD 120 mW
1.41 mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
VCER
VECO
VCBO
IC
PD
300 Volts
7 Volts
300 Volts
100 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD 250 mW
2.94 mW/°C
Operating Temperature Range(3)
Storage Temperature Range(3)
TJ – 55 to +100
Tstg – 55 to +150
°C
°C
Soldering Temperature (10 s)
TL 260 °C
Isolation Surge Voltage
Peak ac Voltage, 60 Hz, 1 Second Duration(1)
VISO
7500
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2
1. are common, and Pins 4, 5 and 6 are common.
2. H11D1 is rated @ 5656 Volts peak (VISO). H11D2 is rated @ 3535 Volts peak (VISO)
1. Otherwise they are identical, both parts built by Motorola are rated @ 7500 Volts peak (VISO)
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
©MMoottoorroolal,aInOc.p1t9o9e5lectronics Device Data
Order this document
by H11D1/D
H11D1*
H11D2
[CTR = 20% Min]
*Motorola Preferred Device
STYLE 1 PLASTIC
61
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
16
25
34
PIN 1. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1

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H11D1 H11D2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
INPUT LED (TA = 25°C unless otherwise noted)
Reverse Leakage Current
(VR = 6 V)
Forward Voltage
(IF = 10 mA)
Capacitance
(V = 0 V, f = 1 MHz)
IR
VF
C
OUTPUT TRANSISTOR (TA = 25°C and IF = 0 unless otherwise noted)
Collector–Emitter Dark Current (RBE = 1 M)
(VCE = 200 V, TA = 25°C)
(TA = 100°C)
H11D1,2
H11D1,2
Collector–Base Breakdown Voltage
(IC = 100 µA)
H11D1,2
Collector–Emitter Breakdown Voltage
(IC = 1 mA, RBE = 1 M)
H11D1,2
Emitter–Base Breakdown Voltage
(IE = 100 µA)
COUPLED (TA = 25°C unless otherwise noted)
Output Collector Current
(VCE = 10 V, IF = 10 mA, RBE = 1 M)
Surge Isolation Voltage (Input to Output)(3)
Peak ac Voltage, 60 Hz, 1 sec
H11D1,2
Isolation Resistance(3)
(V = 500 V)
ICER
V(BR)CBO
V(BR)CER
V(BR)EBO
IC (CTR)(2)
VISO
RISO
Collector–Emitter Saturation Voltage
(IC = 0.5 mA, IF = 10 mA, RBE = 1 M)
Isolation Capacitance(3)
(V = 0, f = 1 MHz)
VCE(sat)
CISO
Turn–On Time
Turn–Off Time
VCC = 10 V, IC = 2 mA, RL = 100
ton
toff
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Min
7
2 (20)
7500
TYPICAL CHARACTERISTICS
Typ(1)
1.2
18
1011
0.2
5
5
Max Unit
10 µA
1.5 Volts
— pF
100 nA
250 µA
Volts
300
Volts
300
— Volts
mA (%)
— Vac(pk)
— Ohms
0.4 Volts
— pF
µs
50
20
10
5
2
RBE = 106
1 VCE = 10 V
0.5 TA = 25°C
0.2
0.1
12
5 10 20
50
IF, LED INPUT CURRENT (mA)
Figure 1. Output Current versus LED Input Current
RBE = 106
20 VCE = 10 V
10 IF = 20 mA
IF = 10 mA
5
IF = 5 mA
2
1
–60 –40 –20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Output Current versus Temperature
2 Motorola Optoelectronics Device Data

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40
10
5
1
0.5
0.1
0.05
0.01
0.005
RBE = 106
TA = 25°C
IF = 50 mA
IF = 10 mA
IF = 5 mA
0.1 0.5 1
5 10
50 100
VCE, COLLECTOR VOLTAGE (VOLTS)
Figure 3. Output Characteristics
300
H11D1 H11D2
2
PULSE ONLY
1.8 PULSE OR DC
1.6
1.4
TA = –55°C
1.2 25°C
1 100°C
1 10
100
IF, LED FORWARD CURRENT (mA)
Figure 4. Forward Characteristics
1000
300
IF = 50 mA
240
180
RBE = 106
VCE = 10 V
120
IF = 10 mA
60 IF = 5 mA
0
–60 –40 –20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Collector–Base Current versus Temperature
1000
100
VCE = 300 V
VCE = 100 V
10
RBE = 106
VCE = 50 V
1
20 30 40 50 60 70 80 90 100
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Dark Current versus Temperature
100
CLED
CCB
10
f = 1 MHz
1
0.01 0.1
1 10
V, VOLTAGE (VOLTS)
Figure 7. Capacitance versus Voltage
100
Motorola Optoelectronics Device Data
3