H11F3.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 H11F3 데이타시트 다운로드

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PHOTO FET OPTOCOUPLERS
PACKAGE
H11F1 H11F2 H11F3
SCHEMATIC
66
1
1
ANODE 1
CATHODE 2
3
6
OUTPUT
TERM.
5
4
OUTPUT
TERM.
6
1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
100to 300 M
99.9% linearity
15 pF shunt capacitance
100 GI/O isolation resistance
As an analog switch
• Extremely low offset voltage
• 60 Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff 15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching
As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
6/24/02

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PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Absolute Maximum Ratings (TA = 25°C unless otherwise specied)
Parameter
Symbol
Device
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (10 µs pulse, 1% duty cycle)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate linearly from 25°C
Breakdown Voltage (either polarity)
Continuous Detector Current (either polarity)
TSTG
TOPR
TSOL
IF
VR
IF(pk)
PD
PD
BV4-6
I4-6
All
All
All
All
All
All
All
All
H11F1, H11F2
H11F3
All
Value
Units
-55 to +150
-55 to +100
260 for 10 sec
°C
°C
°C
60 mA
5V
1A
100 mW
1.33 mW/°C
300
4.0
±30
±15
±100
mW
mW/°C
V
V
mA
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specied.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
OUTPUT DETECTOR
Breakdown Voltage
Either Polarity
Off-State Dark Current
Off-State Resistance
Capacitance
Test Conditions
IF = 16 mA
VR = 5 V
V = 0 V, f = 1.0 MHz
I4-6 = 10µA, IF = 0
V4-6 = 15 V, IF = 0
V4-6 = 15 V, IF = 0, TA = 100°C
V4-6 = 15 V, IF = 0
V4-6 = 15 V, IF = 0, f = 1MHz
Symbol
Device
VF
IR
CJ
BV4-6
I4-6
R4-6
C4-6
All
All
All
H11F1, H11F2
H11F3
All
All
All
All
Min Typ* Max Unit
1.3 1.75 V
10 µA
50 pF
30
V
15
50 nA
50 µA
300 M
15 pF
© 2002 Fairchild Semiconductor Corporation
Page 2 of 9
6/24/02

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PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ISOLATION CHARACTERISTICS
Parameter
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 min.
VI-O = 500 VDC
VI-O = 0, f = 1.0 MHz
Symbol
VISO
RISO
CISO
Min
5300
1011
Typ*
Max Units
Vac (rms)
2 pF
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specied.)
DC Characteristics
Test Conditions
Symbol
Device
On-State Resistance
IF = 16 mA, I4-6 = 100 µA
R4-6
On-State Resistance
Resistance, non-linearity
and assymetry
IF = 16 mA, I6-4 = 100 µA
IF = 16mA, I4-6 = 25 µA RMS,
f = 1kHz
R6-4
H11F1
H11F2
H11F3
H11F1
H11F2
H11F3
All
AC Characteristics
Turn-On Time
Turn-Off Time
Test Conditions
RL = 50, IF = 16mA, V4-6 = 5V
RL = 50, IF = 16mA, V4-6 = 5V
Symbol
ton
toff
Device
All
All
Min Typ* Max Units
200
330
470
200
330
470
0.1 %
Min Typ* Max Units
25 µS
25 µS
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
6/24/02