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GL3276A
GL3276A
Description
The GL3276A is a bipolar analog ICs specifically
developed for use in infrared remote control system
receiving preamplifiers. Capable of accepting a
photodiode directly, these ICs house a high gain
initial amplifier, a limiter, a band-pass filter, a
detection circuit and a waveform shaping circuit
assembled on a single chip.
Features
Less changes of malfunction associated with
a high-frequency lighting fluorscent lamp
internal trap circuit.
The central frequency can be varied with an
external resistance:
fo=30 to 80KHz
fo rimming reduce central frequency variance.
Few external parts.
Internal pull-up resistance and power filter
resistance.
Lower-capacitance external capacitor
Open collector output
Open collector output with a pull-up resistance.
Block Diagram
Pin configuration
(SOP)
VCC1
Out
VCC2
fo
18
27
GL3276A
36
45
IN+
IN-
CD
GND
4
f0
3 VCC2
RS
1 VCC1
IN+
20
ABLC
Initial
Stage
amplifier
IN-
7
R1
C1
Limiter
BPF
+
TRAP
Detector
GND
5
CD
20
C2
RL
OUT
2
OUTPUT
1

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GL3276A
Absolute Maximum Ratings(Ta=25 ¡ )É
SYMBOL
VCC
IOUT
PD
TOPR
TSTG
PARAMETER
Supply voltage
Output Current
Allowable power
dissipation
Operating temperature
Storage temperature
VALUE
6.0
2.5
270
- 20 to +75
-40 to +125
Recommended Operating Condition
SYMBOL
VCC
fIN
PARAMETER
Supply voltage
Input frequency
MIN
4.5
30
TYP
5.0
38
Electrical characteristics (VCC = 5.0V, Ta = 2.5¡ )É
MAX
5.5
80
UNIT
V
mA
mW
¡É
¡É
UNIT
V
KHz
SYMBOL
PARAMETER
TESTCONDITION MIN TYP MAX UNIT REMARK
ICC Supply current
VIN Input voltage
IIN = 0A
IIN=-330 µA
AV Voltage gain
fIN=38kHz
VIN=30 µVP-P
FBW BPF bandwidth
-3dB Bandwidth
VIN=30 µVP-P
rIN
Input impedance
fIN=38kHz CW
VIN=0.2 µVP-P
fIN=38kHz
tPW1 burstwave
Output pulse width
VIN=500 µVP-P
fIN=38kHz
tPW2 burstwave
VIN=50mVP-P
VOL
Low Level
output voltage
VOH
Low Level
output voltage
1.2
2.0 2.5
0.6 0.8
70 76
2.0 2.5
80 110
440
440
0.2
4.8 5.0
Note 1 : rIN =
47
(VIN VX)
K§ Ù(where VIN=input level, VX=test value)
1
2.8 mA
3.1
1.7
V
80 dB
3.0 KHz
160 K§ Ù note * 1
770 µS
note * 1
770 µS
0.4 V
V
2 : input burst
wave form
output pulse
600 µS 600 µS
38KHz Carrier
2

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GL3276A
Pin Description
NO. SYMBOL
1 VCC1
3 VCC2
5 GND
Power input
Power output
Ground
8 IN + Input
7
IN -
Initial amplifier
Gain setup
BPF
4 fo frequency
setup
6
CD
Detection
capacitor
2
OUT
Output
PIN FUNCTION
Apply a voltage of 5V ¡ ¾10 % to pin 1.
As the power is output to pin 3 through the internal
power filter resistance, connect an electrolytic
capacitor to pin 3.
With an internal impedance of 110 K§ Ù(typ.) pin 8
can accept a PIN photodiode directly. An automatic
bias level control (ABLC) circuit prevents the input
from being saturated by external light,
assuring bias level stability for the input pin.
Initial amplifier differential inverted output. Its gain
can be set up with an external impedance.
The central frequency of the band-pass filter can be
varied with an external resistance. A built-in trap
circuit prevents malfunctions associated with a high-
frequency lighting fluorescent lamp.
Pin to which a detection capacitor is connected.
Open collector output with pull-up resistance.
Its capability to drive a CMOS or TTL makes for easy
connection with a receiving microcomputer.
The GL3276A has an active low output.
Sample Application Circuits
8 Pin Plastic
SOP
Photo diode
C1 1500pF 0.01µF
R1 0 to 1k
87
IN + IN -
65
CD GND
GL3276A
VCC1
1
OUT
2
VCC2
3
f0
4
Power
supply
Output
130 k§ Ù(R2)
47 µF
3

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Typical Characteristics (TA = 25¡ É)
Supply Current vs. Supply Voltage
2.5
2
1.5
1
0.5
2.5 3
3.5 4 4.5 5 5.5 6.5
VCC-Supply Voltage
GL3276A
Frequency vs. Resistance (R2)
Vcc=5V
90
80
70
60
50
40
30
20
40 60 80 100 120 140 160 180 200
R2-Resistance-k§ Ù
Voltage Gain vs. Input Frequency
90 VCC=5V
80
R2=130k§ Ù
Vi=30¥ ìVp-p
70
60
50
40
30
20
10
0
25 30 35 40 45
50
fIN-Input Frequency
Gain vs. Capacitance(C1)
82
78
74
70
66
1000 2000 3000 4000 5000
CI-Capacitance-pF
Frequency
4