J297.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 J297 데이타시트 다운로드

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2SJ297(L), 2SJ297(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
LDPAK
4
123
D
G
S
4
12
3
1. Gate
2. Drain
3. Source
4. Drain
November 1996

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2SJ297(L), 2SJ297(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
–60
±20
–20
–80
–20
–20
34
60
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
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2SJ297(L), 2SJ297(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
10
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
td(on)
tr
td(off)
tf
VDF
Body to drain diode reverse
recovery time
trr
Note 1. Pulse test
Typ Max Unit
——V
——V
0.05
0.07
16
2200
1000
300
25
130
320
210
–1.1
±10
–250
–2.25
0.065
0.095
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
160 —
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V*1
ID = –10 A, VGS = –4 V*1
ID = –10 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –10 A, VGS = –10 V,
RL = 3
IF = –20 A, VGS = 0
IF = –20 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SJ291
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2SJ297(L), 2SJ297(S)
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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