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STD60N3LH5
STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
STD60N3LH5
STP60N3LH5
STU60N3LH5
VDSS
30 V
30 V
30 V
RDS(on) max
0.008
0.0084
0.0084
ID
48 A
48 A
48 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD60N3LH5
STP60N3LH5
STU60N3LH5
Marking
60N3LH5
60N3LH5
60N3LH5
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
April 2009
Doc ID 14079 Rev 3
1/16
www.st.com
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Contents
Contents
STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 14079 Rev 3

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STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VDS Drain-source voltage (VGS = 0) @ TJMAX
VGS
ID (1)
Gate-Source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM (2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V
Value
30
35
± 22
48
42.8
192
60
0.4
160
-55 to 175
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
Value
2.5
100
275
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
Unit
°C/W
°C/W
°C
Doc ID 14079 Rev 3
3/16

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Electrical characteristics
STD60N3LH5, STP60N3LH5, STU60N3LH5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 30 V
VDS = 30 V,Tc = 125 °C
VGS = ± 22 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 24 A
SMD version
VGS= 10 V, ID= 24 A
VGS= 5 V, ID= 24 A
SMD version
VGS= 5 V, ID= 24 A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1 1.8
3V
0.0072 0.008
0.0076 0.0084
0.0088 0.011
0.0092 0.0114
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
VDS =25 V, f=1 MHz,
VGS=0
VDD=15 V, ID = 48 A
VGS =5 V
(Figure 14)
VDD=15 V, ID = 48 A
VGS =5 V
(Figure 19)
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
Min. Typ. Max. Unit
1350
pF
- 265 - pF
32 pF
8.8 nC
- 4.7 - nC
2.2 nC
2.2 nC
--
2.5 nC
- 1.1 -
4/16 Doc ID 14079 Rev 3

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STD60N3LH5, STP60N3LH5, STU60N3LH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
VDD=10 V, ID= 24 A,
RG=4.7 Ω, VGS= 10 V
(Figure 13 and
Figure 18)
td(off)
tf
Turn-off delay time
Fall time
VDD=10 V, ID= 24 A,
RG=4.7 Ω, VGS= 10 V
(Figure 13 and
Figure 18)
Min. Typ. Max. Unit
6
-
33
ns
-
ns
19 ns
--
4.2 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
Source-drain current
Source-drain current (pulsed)(1)
VSD Forward on voltage
ISD=24 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=48 A,
di/dt =100 A/µs,
VDD=20 V, (Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
48 A
-
192 A
- 1.1 V
25
- 18.5
1.5
ns
nC
A
Doc ID 14079 Rev 3
5/16