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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1411
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·Low saturation voltage
·Complementary to 2SB1018
APPLICATIONS
·Power amplifier applications
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
100
80
5
7
1
30
2.0
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1411
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.4A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
fT Transition frequency
VCE=4V;IC=1A
COB Collector output capacitance
f=1MHz ; VCB=10V;IE=0
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=0.3A
VCC=30V ,RL=10A
MIN TYP. MAX UNIT
80 V
0.25 0.5
V
0.9 1.4
V
5 µA
5 µA
70 240
30
10 MHz
250 pF
0.4 µs
2.5 µs
0.5 µs
hFE-1 Classifications
OY
70-140
120-240
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1411
Fig.2 Outline dimensions(unindicated tolerance: ±0.15 mm)
3