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TK14A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK14A55D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)
High forward transfer admittance: Yfs= 6.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
550
±30
14
56
50
521
14
5.0
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.5
62.5
Unit
°C/W
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.6 mH, RG = 25 Ω, IAR = 14 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
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Electrical Characteristics (Ta = 25°C)
TK14A55D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
VGS = ±30 V, VDS = 0 V
VDS = 550 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7 A
VDS = 10 V, ID = 7 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50 Ω
ID = 7 A VOUT
RL =
29 Ω
⎯ ⎯ ±1
⎯ ⎯ 10
550
2.0 4.0
0.31 0.37
1.8 6.5
2300
10
250
50
100
tf
VDD 200 V
25
toff Duty 1%, tw = 10 μs
140
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 14 A
Qgd
40
25 nC
15
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 14 A, VGS = 0 V
IDR = 14 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Marking
Min Typ. Max Unit
⎯ ⎯ 14 A
⎯ ⎯ 56 A
⎯ −1.7
V
1600
ns
20 ⎯ μC
K14A55D
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
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ID – VDS
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
16
10 8
6.75
6.5
12
86
4 5.5
VGS = 5V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
TK14A55D
ID – VDS
40
10 8
7.5 COMMON SOURCE
Tc = 25°C
PULSE TEST
32
7
24
6.5
16
6
8
5.5
VGS = 5 V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
40
COMMON SOURCE
VDS = 20 V
PULSE TEST
32
ID – VGS
24
25
16
100
10 Tc = −55°C
0
0246 8
GATE-SOURCE VOLTAGE VGS
10
(V)
VDS – VGS
10
COMMON SOURCE
Tc = 25
PULSE TEST
8
6
ID = 14 A
4
7
2
3.5
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
Yfs– ID
100
COMMON SOURCE
VDS = 20 V
PULSE TEST
10
Tc = −55°C
100
25
1
0.1
0.1
1
10 100
DRAIN CURRENT ID (A)
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V, 15 V
0.1
0.1
1 10
DRAIN CURRENT ID (A)
100
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