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TK13A65U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK13A65U
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.32 (typ.)
High forward transfer admittance: Yfs= 8.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
650
±30
13
26
40
86
13
4.0
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
0.69 ± 0.15
Ф0.2 M A
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 0.9 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
Start of commercial production
2009-03
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Electrical Characteristics (Ta = 25°C)
TK13A65U
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 650 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
VDS = 10 V, ID = 6.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
650
3.0
2.0
tr
10 V
ID = 6.5 A VOUT
VGS
0V
ton
50 Ω
RL = 31 Ω
tf
VDD 200 V
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 13 A
Qgd
Typ.
0.32
8.0
950
47
2300
Max
±1
100
5.0
0.38
30
65
8
80
17
10
7
Unit
μA
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 13 A
⎯ ⎯ 26 A
⎯ ⎯ −1.7 V
430
ns
7.0 ⎯ μC
Marking
K13A65U
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
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15
Common source
Tc = 25°C
12 Pulse test
ID – VDS
10 8
7.5
7.3
97
6.8
6
6.5
3
VGS = 6 V
0
02
46
8 10
Drainsource voltage VDS (V)
TK13A65U
25
10
20
15
10
ID – VDS
8
Common source
Tc = 25°C
Pulse test
7.5
7.3
7
5 6.5
VGS = 6 V
0
0 10 20 30 40 50
Drainsource voltage VDS (V)
20
Common source
VDS = 10 V
16 Pulse test
ID – VGS
12
8
100
25 Tc = −55°C
4
0
0 2 4 6 8 10
Gatesource voltage VGS (V)
VDS – VGS
10
Common source
Tc = 25°C
Pulse test
8
6
ID = 13 A
4
6.5
2
3.3
0
0 4 8 12 16 20
Gatesource voltage VGS (V)
100
Common source
VDS = 10 V
Pulse test
10
Yfs⎪ − ID
Tc = −55°C
100 25
1
0.1
0.1
1 10
Drain current ID (A)
100
RDS (ON) ID
10
Common source
Tc = 25°C
Pulse test
1
VGS = 10 V
0.1
0.1
1 10
Drain current ID (A)
100
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