D1404.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 D1404 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·B/W TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
300 V
150 V
6V
7A
15 A
IB Base Current-Continuous
Collector Power Dissipation
Ta=25
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
2
W
25
150
-55~150
isc Product Specification
2SD1404
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1404
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICES Collector Cutoff Current
VCE= 250V; VBE= 0
hFE DC Current Gain
IC= 5A ; VCE= 1.5V
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 6A
tf Fall Time
ICP= 5A; IB1(end)= 0.5A
MIN TYP. MAX UNIT
150 V
300 V
6V
1.5 V
1.5 V
1 mA
10
18 MHz
1.8 V
1.0 μs
isc websitewww.iscsemi.cn
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