LZP60N06.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 LZP60N06 데이타시트 다운로드

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LITE ON LITE-ON
SEMICONDUCTOR
LZP60N06
Features
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• High di/dt Capability
• Improved Gate Charge
• Wide Expanded Safe Operating Area
Application
• DC-DC Converters
• UPS & Monitors
• High Power Swtching
D
G
S
GDS
TO-220
BVDSS = 60V
RDS(on) = 0.016
Typ = 0.014
ID = 60A
Absolute Maximum Ratings ( TC = 25°C Unless Otherwise Specified)
Symbol
Characteristic
VDSS
ID
IDM
VGS
EAS
IAR
Drain-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
(1)
(2)
(1)
EAR Repetitive Avalanche Energy
(1)
dv/dt Peak Diode Recovery dv/dt
(3)
PD
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
TJ, TSTG Operating Junction and Storage Temperature Range
TL
Maximum Lead Temp. for soldering purposes,
1/8" from case for 5-seconds
Value
60
60
43
240
± 20
600
60
12.5
5.5
125
0.83
-55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Junction-to-Case-to-Sink
Junction-to-Ambient
Typ.
Max.
Units
-- 1.2
0.5 -- °C/W
-- 62.5
Rev 0. September. 2006

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LZP60N06
N-CHANNEL
Electrical Characteristics (TC = 25°C unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max.
BVDSS
BVDSS/TJ
VGS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
60
--
2.5
--
0.08
--
--
--
4.5
IGSS
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
--
--
-- 100
-- -100
IDSS
Drain-to-Source Leakage Current
--
--
--
--
1
10
RDS(on)
Static Drain-Source
On-State Resistance
-- 0.014 0.016
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 40
--
-- 1745 2270
-- 445 580
-- 85 110
-- 25 60
-- 130 270
-- 75 160
-- 85 180
-- 43 56
-- 12
--
-- 13
--
Units
V
V/°C
V
nA
µA
pF
ns
nC
Test Condition
VGS = 0V, ID = 250µA
ID = 250µA
VDS = VGS, ID = 250µA
VGS = 20V
VGS = -20V
VDS = 60V
VDS = 48V, TC = 125°C
VGS = 10V, ID = 30A
(4)
VDS = 25V, ID = 30A
(4)
VGS = 0V, VDS = 25V,
f = 1MHz
VDD = 30V, ID = 60A,
RG = 25
(4)(5)
VDS = 48V, VGS = 10V,
ID = 60A
(4)(5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
--
(1) --
(4) --
--
--
Typ.
--
--
--
55
100
Max.
60
240
1.5
--
--
Units
A
V
ns
nC
Test Condition
Integral reverse pn-
diode in the MOSFET
IS = 60A, VGS = 0V
IF = 60A, VGS = 0V,
dIF / dt = 100A/µs (4)
Notes:
(1). Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2). L = 195uH, IAS =60A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
(3). ISD 60A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
(4). Pulse Test : Pulse Width 300µs, Duty Cycle 2%
(5). Essentially Independent of Operating Temperature
Rev 0. September. 2006

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LZP60N06
Typical Characterisics
Top :
VGS
15.0 V
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100
VDS, Drain-Source Voltage [V]
101
Fig 1. On-Region Characteristics
N-CHANNEL
102
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 30V
2. 250µ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Fig 2. Transfer Characteristics
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 µ A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Fig 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
102
101
175
100
10-1
0.2
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Fig 4. Body Diode Forward Voltage
Variation vs. Source Current and
4000
3000
2000
1000
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Fig 5. Capacitance Characteristics
Rev 0. September. 2006
12
10 VDS = 30V
VDS = 48V
8
6
4
2
Note : ID = 60A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Fig 6. Gate Charge Characteristics

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LZP60N06
Typical Charateristics
1.2
1.1
1.0
0.9 Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Fig 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
102 1 ms
10 ms
DC 100 ms
101
100
100
Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
VDS, Drain-Source Voltage [V]
102
Fig 9. Maximum Safe Operating Area
N-CHANNEL
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 30 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Fig 8. On-Resistance Variation
vs Temperature
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature []
Fig 10. Maximum Drain Current
vs. Case Temperature
175
100
D =0.5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
single pulse
N otes :
1 . Z θ JC(t) = 1 .2 /W M a x .
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D ura tion [se c]
Fig 11. Transient Thermal Response Curve
101
Rev 0. September. 2006

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LZP60N06
Test Circuit and waveform
VDS
L
IAS
VGS
0V
tP
RG
DUT
VDD
0
Unclamped Energy Test Circuit
N-CHANNEL
tP BVDSS
IAS
VDD
tAV Time
Unclamped Energy Waveforms
RL
RG DUT
VDD
tON
td(on)
tr
VDS
90%
0 10%
VGS
tOFF
td(off)
tf
90%
10%
90%
Switching Time Test Circuit
VGS
0
10%
Resistive Switching Waveforms
VDS
RL
VGS
Ig
DUT
Gate Charge Test Circuit
VDD
VDS
Qgs
Qg(TOTAL)
Qgd
VGS
VGS=10V
0 Ig
Gate Charge Waveforms
Rev 0. September. 2006