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2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1436(K)
Outline
TO-3P
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
2
1
1.0 k
(Typ)
200
(Typ)
3
ID

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2SB1032(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
C to E diode forward current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
ID*1
PC * 1
Tj
Tstg
Rating
–120
–120
–7
–10
–15
10
80
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
1000
Typ
0.8
4.0
Max Unit
—V
—V
–100 µA
–10 µA
20000
–1.5 V
–3.0 V
–2.0 V
–3.5 V
3.0 V
µs
µs
Test conditions
IC = –25 mA, RBE =
IE = –200 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE =
VCE = –3 V, IC = –5 A*1
IC = –5 A, IB = –10 mA*1
IC = –10 A, IB = –0.1 A*1
IC = –5 A, IB = –10 mA*1
IC = –10 A, IB = –0.1 A*1
ID = 10 A*1
VCC = –30 V,
IC = –5 A, IB1 = –IB2 = –10 mA
2

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Maximum Collector Dissipation Curve
100
80
60
40
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
–10
–1.5
–1.0
Pc
–0.9
=
80
W
–8 –0.8
–0.7
–6 –0.6
–0.5
–4
–0.4
–2 TC = 25°C
IB = 0 mA
0 –2 –4 –6 –8 –10
Collector to emitter Voltage VCE (V)
2SB1032(K)
Area of Safe Operation
–30
iC (peak)
1 µs
–10
IC (max)
–3
–1.0
–0.3
–0.1
–0.03
–3
Ta = 25°C
1 Shot pulse
–10 –30
–100 –300
Collector to emitter Voltage VCE (V)
30,000
10,000
3,000
1,000
DC Current Transfer Ratio vs.
Collector Current
Ta =2–572°5C5°C°C
VCE = –3 V
Pulse
300
100
30
–0.3
–1.0 –3
–10
Collector current IC (A)
–30
3